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TT Electronics
D2210UK
285-D2210UK
PDF Datasheet
Trans RF MOSFET N-CH 40V 16A 3-Pin Case DP
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Tech Specifications
Typical Input Capacitance @ Vds (pF)
96(Max)@12.5V
Typical Output Capacitance @ Vds (pF)
80(Max)@12.5V
Configuration
Single
PCB changed
3
HTSUS
8541.29.00.95
Maximum Gate Source Leakage Current (nA)
8000
Typical Power Gain (dB)
10(Min)
Number of Elements per Chip
1
D2210UK Description
Trans RF MOSFET N-CH 40V 16A 3-Pin Case DP
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