Vishay General Semiconductor – Diodes Division_BU25H08-E3/P
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Vishay General Semiconductor – Diodes Division
BU25H08-E3/P

299-BU25H08-E3/P
PDF Datasheet
BRIDGE RECT 1P 600V 3.5A BU
10 Weeks

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ISO9001
Quality Policy
ISO45001
ISO14001
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Tech Specifications

Operating Temperature
-55°C ~ 175°C (TJ)
Voltage - Peak Reverse (Max)
600 V
Diode Type
Single Phase
ECCN
EAR99
Mounting Type
Through Hole
Product Status
Active
Supplier Device Package
isoCINK+™ BU
Current - Reverse Leakage @ Vr
5 µA @ 600 V
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BU25H08-E3/P Description

Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Bridge Rectifiers that the BU25H08-E3/P belongs to can be classified under the Discrete Semiconductors. BU25H08-E3/P is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. BU25H08-E3/P provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay General Semiconductor – Diodes Division plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay General Semiconductor – Diodes Division is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay General Semiconductor – Diodes Division builds trust with consumers and enhances the overall reputation of their products.

FAQ

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Yes. BU25H08-E3/P currently shows 783 unit(s) in stock.
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