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SI2301ADS-T1-E3
285-SI2301ADS-T1-E3
Small Signal Field-Effect Transistor, 1.75A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3
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Tech Specifications
Package/Case
SOT-23-3
Continuous Drain Current (ID)
2A
Drain to Source Resistance
130mR
Drain to Source Voltage (Vdss)
-20V
Fall Time
30ns
Gate to Source Voltage (Vgs)
8V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SI2301ADS-T1-E3 Description
Small Signal Field-Effect Transistor, 1.75A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3
FAQ
What is SI2301ADS-T1-E3?
SI2301ADS-T1-E3 is a RF FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
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