Vishay_SI2308DS
original

Vishay
SI2308DS

285-SI2308DS
Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, SOT-23, 3 PIN

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Package/Case
SOT-23
Continuous Drain Current (ID)
2A
Current
17A
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
60V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Max Power Dissipation
1.25W
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SI2308DS Description

Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, SOT-23, 3 PIN

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SI2308DS is a RF FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
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