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SI5903DC-T1
285-SI5903DC-T1
Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1206-8, CHIPFET-8
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Tech Specifications
Continuous Drain Current (ID)
2.1A
Drain to Source Resistance
155mR
Drain to Source Voltage (Vdss)
-20V
Fall Time
35ns
Gate to Source Voltage (Vgs)
12V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
SI5903DC-T1 Description
Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1206-8, CHIPFET-8
FAQ
What package or case is SI5903DC-T1 available in?
SI5903DC-T1 is available in the 3000 package / case.
What is SI5903DC-T1?
What operating temperature range does SI5903DC-T1 support?
What voltage specification is listed for SI5903DC-T1?
Are there related or alternative parts for SI5903DC-T1?
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