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SI4816BDY-T1-GE3
278-SI4816BDY-T1-GE3
PDF Datasheet
N-Channel JFET, 30V, 5.8A ID, 18.5mR Rds On, 2-Element, SOP-8
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Tech Specifications
Package/Case
SO
Continuous Drain Current (ID)
5.8A
Drain to Source Resistance
9.3mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
18.5mR
Fall Time
9ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
SI4816BDY-T1-GE3 Description
N-Channel JFET, 30V, 5.8A ID, 18.5mR Rds On, 2-Element, SOP-8
FAQ
What package or case is SI4816BDY-T1-GE3 available in?
SI4816BDY-T1-GE3 is available in the SO package / case.
What operating temperature range does SI4816BDY-T1-GE3 support?
What is SI4816BDY-T1-GE3?
What is the mounting type of SI4816BDY-T1-GE3?
Is SI4816BDY-T1-GE3 currently in stock?
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