onsemi

BC858BWT1G  

Single Bipolar Transistors

BC858BWT1G Description

The BC858BWT1G from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Packaged in a compact SC70-3 (SOT-323) surface-mount form factor, it offers a collector-emitter voltage (V_CE) rating of 30V and a maximum collector current (I_C) of 100mA, making it suitable for low-power circuits. With a transition frequency (f_T) of 100MHz, it provides excellent high-frequency performance, while its low V_CE(sat) of 650mV (at 5mA I_B, 100mA I_C) ensures efficient switching operation. The device is RoHS3 compliant, REACH unaffected, and rated for MSL 1 (unlimited shelf life), ensuring reliability in automated assembly processes.

BC858BWT1G Features

• High DC Current Gain (h_FE): 220 (min) @ 2mA, 5V, ensuring strong signal amplification.
• Low Leakage Current: 15nA (max) collector cutoff current (I_CBO), minimizing power loss in standby modes.
• Optimized for SMT Assembly: Tape & Reel (TR) packaging enables high-speed pick-and-place manufacturing.
• Low Saturation Voltage: 650mV @ 100mA I_C, reducing power dissipation in switching applications.
• Wide Operating Range: -55°C to +150°C junction temperature tolerance for robust performance.

BC858BWT1G Applications

• Signal Amplification: Ideal for audio preamps, sensor interfaces, and other low-noise analog circuits.
• Switching Circuits: Used in load drivers, relay control, and low-power DC-DC converters due to its low V_CE(sat).
• Portable Electronics: Suitable for battery-powered devices like wearables and IoT sensors, thanks to its low leakage current.
• High-Frequency Applications: RF stages and oscillator circuits benefit from its 100MHz f_T.

Conclusion of BC858BWT1G

The BC858BWT1G is a versatile, high-performance PNP transistor offering a balance of low power consumption, compact size, and reliable switching/amplification capabilities. Its high h_FE, low saturation voltage, and SMT-friendly packaging make it a preferred choice for modern electronics, particularly in space-constrained and energy-efficient designs. Whether used in consumer electronics, industrial controls, or communication systems, this transistor delivers consistent performance under demanding conditions.

BC858BWT1G Documents

Download datasheets and manufacturer documentation for BC858BWT1G

PCN Assembly/Origin :

Mult Dev 05/Dec/2019      

Datasheets :

BC856B-58B      

HTML Datasheet :

BC856B-58B      

PCN Design/Specification :

Copper Wire 19/May/2010      

Environmental Information :

onsemi RoHS       onsemi REACH       Material Declaration BC858BWT1G