onsemi

BC858BWT1G

BC858BWT1G Description

The BC858BWT1G from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Packaged in a compact SC70-3 (SOT-323) surface-mount form factor, it offers a collector-emitter voltage (V_CE) rating of 30V and a maximum collector current (I_C) of 100mA, making it suitable for low-power circuits. With a transition frequency (f_T) of 100MHz, it provides excellent high-frequency performance, while its low V_CE(sat) of 650mV (at 5mA I_B, 100mA I_C) ensures efficient switching operation. The device is RoHS3 compliant, REACH unaffected, and rated for MSL 1 (unlimited shelf life), ensuring reliability in automated assembly processes.

BC858BWT1G Features

• High DC Current Gain (h_FE): 220 (min) @ 2mA, 5V, ensuring strong signal amplification.
• Low Leakage Current: 15nA (max) collector cutoff current (I_CBO), minimizing power loss in standby modes.
• Optimized for SMT Assembly: Tape & Reel (TR) packaging enables high-speed pick-and-place manufacturing.
• Low Saturation Voltage: 650mV @ 100mA I_C, reducing power dissipation in switching applications.
• Wide Operating Range: -55°C to +150°C junction temperature tolerance for robust performance.

BC858BWT1G Applications

• Signal Amplification: Ideal for audio preamps, sensor interfaces, and other low-noise analog circuits.
• Switching Circuits: Used in load drivers, relay control, and low-power DC-DC converters due to its low V_CE(sat).
• Portable Electronics: Suitable for battery-powered devices like wearables and IoT sensors, thanks to its low leakage current.
• High-Frequency Applications: RF stages and oscillator circuits benefit from its 100MHz f_T.

Conclusion of BC858BWT1G

The BC858BWT1G is a versatile, high-performance PNP transistor offering a balance of low power consumption, compact size, and reliable switching/amplification capabilities. Its high h_FE, low saturation voltage, and SMT-friendly packaging make it a preferred choice for modern electronics, particularly in space-constrained and energy-efficient designs. Whether used in consumer electronics, industrial controls, or communication systems, this transistor delivers consistent performance under demanding conditions.