German
Japanese
Portuguese
Korea
Mexico
Dutch
Vishay
SI7121ADN-T1-GE3
2088-SI7121ADN-T1-GE3
PDF Datasheet
Power Field-Effect Transistor, 18A I(D), 30V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
16 Weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Continuous Drain Current (ID)
-18A
Drain to Source Resistance
21mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
10ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
1.87nF
Lead Free
Lead Free
Max Operating Temperature
150°C
SI7121ADN-T1-GE3 Description
Power Field-Effect Transistor, 18A I(D), 30V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
FAQ
Are there related or alternative parts for SI7121ADN-T1-GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is the standard lead time for SI7121ADN-T1-GE3?
What is SI7121ADN-T1-GE3?
What voltage specification is listed for SI7121ADN-T1-GE3?
What is the mounting type of SI7121ADN-T1-GE3?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
