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SI7464DP-T1-E3
278-SI7464DP-T1-E3
PDF Datasheet
200V 1.8A N-CH MOSFET, 240mR Rds On, SOIC
18 weeks
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Tech Specifications
Package/Case
SOIC
Continuous Drain Current (ID)
1.8A
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
200V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Length
4.9mm
SI7464DP-T1-E3 Description
200V 1.8A N-CH MOSFET, 240mR Rds On, SOIC
FAQ
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