


Vishay
SI7900AEDN-T1-GE3
2088-SI7900AEDN-T1-GE3
PDF Datasheet
TRANSISTOR 6 A, 20 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8, FET General Purpose Power
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
Continuous Drain Current (ID)
6A
Drain to Source Resistance
26mR
Drain to Source Voltage (Vdss)
20V
Fall Time
1300ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SI7900AEDN-T1-GE3 Description
TRANSISTOR 6 A, 20 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8, FET General Purpose Power
FAQ
What package or case is SI7900AEDN-T1-GE3 available in?
SI7900AEDN-T1-GE3 is available in the 3000 package / case.
Is SI7900AEDN-T1-GE3 currently in stock?
What voltage specification is listed for SI7900AEDN-T1-GE3?
What is SI7900AEDN-T1-GE3?
What operating temperature range does SI7900AEDN-T1-GE3 support?



.png)













.png?x-oss-process=image/format,webp/resize,h_32)










