Vishay
SI7956DP-T1-E3
2088-SI7956DP-T1-E3
PDF Datasheet
150V 2.6A 105mR 2-CH N-CH MOSFET SOIC
13 Weeks
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Tech Specifications
Package/Case
SOIC
Continuous Drain Current (ID)
2.6A
Drain to Source Resistance
105mR
Drain to Source Voltage (Vdss)
150V
Fall Time
36ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
SI7956DP-T1-E3 Description
150V 2.6A 105mR 2-CH N-CH MOSFET SOIC
FAQ
What is SI7956DP-T1-E3?
SI7956DP-T1-E3 is a FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
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What voltage specification is listed for SI7956DP-T1-E3?
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