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SI8489EDB-T2-E1
278-SI8489EDB-T2-E1
PDF Datasheet
Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1 X 1 MM, 0.548 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, MICRO FOOT, 4 PIN
18 weeks
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Tech Specifications
Package/Case
BGA
Continuous Drain Current (ID)
5.4A
Drain to Source Resistance
44mR
Drain to Source Voltage (Vdss)
20V
Fall Time
25ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
765pF
Max Operating Temperature
150°C
SI8489EDB-T2-E1 Description
Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1 X 1 MM, 0.548 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, MICRO FOOT, 4 PIN
FAQ
What is the mounting type of SI8489EDB-T2-E1?
SI8489EDB-T2-E1 uses a Surface Mount mounting style based on the listed product specifications.
What package or case is SI8489EDB-T2-E1 available in?
Are there related or alternative parts for SI8489EDB-T2-E1?
What operating temperature range does SI8489EDB-T2-E1 support?
What voltage specification is listed for SI8489EDB-T2-E1?
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