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SI8806DB-T2-E1
278-SI8806DB-T2-E1
PDF Datasheet
N-Channel MOSFET, 12V, 3.9A, 35mR, BGA, Surface Mount
6 weeks
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Tech Specifications
Package/Case
BGA
Continuous Drain Current (ID)
3.9A
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
12V
Fall Time
12ns
Gate to Source Voltage (Vgs)
8V
Height
0.213mm
Lead Free
Lead Free
SI8806DB-T2-E1 Description
N-Channel MOSFET, 12V, 3.9A, 35mR, BGA, Surface Mount
FAQ
What voltage specification is listed for SI8806DB-T2-E1?
The listed voltage-related specification for SI8806DB-T2-E1 is 12V.
What is the mounting type of SI8806DB-T2-E1?
What is SI8806DB-T2-E1?
What operating temperature range does SI8806DB-T2-E1 support?
What is the standard lead time for SI8806DB-T2-E1?
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