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SI8808DB-T2-E1
278-SI8808DB-T2-E1
PDF Datasheet
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.80 X 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, MICRO FOOT, 4 PIN
63 weeks
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Tech Specifications
Continuous Drain Current (ID)
2.5A
Drain to Source Resistance
95mR
Drain to Source Voltage (Vdss)
30V
Gate to Source Voltage (Vgs)
8V
Input Capacitance
330pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
SI8808DB-T2-E1 Description
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.80 X 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, MICRO FOOT, 4 PIN
FAQ
What is the mounting type of SI8808DB-T2-E1?
SI8808DB-T2-E1 uses a Surface Mount mounting style based on the listed product specifications.
What package or case is SI8808DB-T2-E1 available in?
What is the standard lead time for SI8808DB-T2-E1?
What is SI8808DB-T2-E1?
What voltage specification is listed for SI8808DB-T2-E1?
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