German
Japanese
Portuguese
Korea
Mexico
Dutch
Vishay
SI8902EDB-T2-E1
278-SI8902EDB-T2-E1
PDF Datasheet
MOSFET 2N-CH 20V 3.9A 6-MFP
25 weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Continuous Drain Current (ID)
3.9A
Drain to Source Resistance
45mR
Drain to Source Voltage (Vdss)
20V
Fall Time
3000ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SI8902EDB-T2-E1 Description
MOSFET 2N-CH 20V 3.9A 6-MFP
FAQ
What package or case is SI8902EDB-T2-E1 available in?
SI8902EDB-T2-E1 is available in the 3000 package / case.
Are there related or alternative parts for SI8902EDB-T2-E1?
What is SI8902EDB-T2-E1?
What is the standard lead time for SI8902EDB-T2-E1?
What operating temperature range does SI8902EDB-T2-E1 support?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
