German
Japanese
Portuguese
Korea
Mexico
Dutch
Vishay
SIHB30N60E-GE3
278-SIHB30N60E-GE3
PDF Datasheet
600V 29A N-CH MOSFET, 125mR RdsOn, D2PAK
18 weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
D2PAK
Continuous Drain Current (ID)
29A
Drain to Source Resistance
125mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
125mR
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
SIHB30N60E-GE3 Description
600V 29A N-CH MOSFET, 125mR RdsOn, D2PAK
FAQ
What is SIHB30N60E-GE3?
SIHB30N60E-GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
What is the mounting type of SIHB30N60E-GE3?
Are there related or alternative parts for SIHB30N60E-GE3?
What voltage specification is listed for SIHB30N60E-GE3?
Does SIHB30N60E-GE3 have quantity-based pricing?
Availability
(In Stock :
22 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.07600 | $5.08 |
| 10+ | $4.96628 | $49.66 |
| 50+ | $4.89257 | $244.63 |
ADD TO CART
QUICK ORDER
Unit Price $5.07600
Subtotal $5.08
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
