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SIHB33N60E-GE3
278-SIHB33N60E-GE3
PDF Datasheet
600V 33A N-Channel MOSFET, D2PAK, 99mR Rds(on)
18 weeks
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Tech Specifications
Package/Case
D2PAK
Continuous Drain Current (ID)
33A
Drain to Source Resistance
99mR
Drain to Source Voltage (Vdss)
600V
Fall Time
80ns
Gate to Source Voltage (Vgs)
4V
Input Capacitance
3.508nF
Lead Free
Lead Free
SIHB33N60E-GE3 Description
600V 33A N-Channel MOSFET, D2PAK, 99mR Rds(on)
FAQ
Are there related or alternative parts for SIHB33N60E-GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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