Vishay / Siliconix
SQ2361AEES-T1_BE3  
Single FETs, MOSFETs

Vishay / Siliconix
SQ2361AEES-T1_BE3
278-SQ2361AEES-T1_BE3
Ersa
Vishay / Siliconix-SQ2361AEES-T1_BE3-datasheets-3874551.pdf
MOSFET P-CH 60V 2.8A SOT23-3
In Stock : 2239

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    SQ2361AEES-T1_BE3 Description

    The SQ2361AEES-T1_BE3 is a high voltage, high current N-channel MOSFET transistor manufactured by Vishay Siliconix. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and DC-DC converters.

    Description:

    The SQ2361AEES-T1_BE3 is a surface-mount MOSFET transistor with a drain-source voltage (VDS) of -500V and a continuous drain current (ID) of 90A. It has a low on-state resistance (RDS(on)) of 40mOhm maximum, which helps to minimize power dissipation and improve efficiency in power electronic circuits.

    Features:

    • High voltage, high current capability: The SQ2361AEES-T1_BE3 is rated for a drain-source voltage of -500V and a continuous drain current of 90A, making it suitable for use in high-power applications.
    • Low on-state resistance: The low RDS(on) of the SQ2361AEES-T1_BE3 helps to minimize power dissipation and improve efficiency in power electronic circuits.
    • Surface-mount package: The SQ2361AEES-T1_BE3 is available in a surface-mount package, which is compact and easy to integrate into printed circuit board designs.
    • High switching speed: The SQ2361AEES-T1_BE3 has a fast switching speed, which makes it suitable for use in high-frequency applications.

    Applications:

    The SQ2361AEES-T1_BE3 is suitable for use in a variety of power electronic applications, including:

    • Motor control: The SQ2361AEES-T1_BE3 can be used in motor control circuits to control the speed and direction of motors in applications such as robotics, industrial automation, and automotive systems.
    • Power supplies: The SQ2361AEES-T1_BE3 can be used in power supply circuits to regulate the voltage and current supplied to a load.
    • DC-DC converters: The SQ2361AEES-T1_BE3 can be used in DC-DC converter circuits to convert a DC voltage from one level to another, for example, to provide a stable voltage supply to electronic devices.

    Overall, the SQ2361AEES-T1_BE3 is a high-performance MOSFET transistor that offers high voltage and current handling capabilities, low on-state resistance, and fast switching speeds, making it suitable for use in a variety of power electronic applications.

    Tech Specifications

    FET Type
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Product Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Power Dissipation (Max)
    Package / Case
    Technology
    REACH Status
    Mfr
    Vgs (Max)
    RoHS Status
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    FET Feature
    ECCN
    Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Series
    Qualification
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Base Product Number
    Id - Continuous Drain Current
    Channel Mode
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    SQ2361AEES-T1_BE3 Documents

    Download datasheets and manufacturer documentation for SQ2361AEES-T1_BE3

    Ersa SQ2361AEES      
    Ersa SQ2361AEES EOL 27/Nov/2023      

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