The SQ2361AEES-T1_BE3 is a high voltage, high current N-channel MOSFET transistor manufactured by Vishay Siliconix. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and DC-DC converters.
Description:
The SQ2361AEES-T1_BE3 is a surface-mount MOSFET transistor with a drain-source voltage (VDS) of -500V and a continuous drain current (ID) of 90A. It has a low on-state resistance (RDS(on)) of 40mOhm maximum, which helps to minimize power dissipation and improve efficiency in power electronic circuits.
Features:
High voltage, high current capability: The SQ2361AEES-T1_BE3 is rated for a drain-source voltage of -500V and a continuous drain current of 90A, making it suitable for use in high-power applications.
Low on-state resistance: The low RDS(on) of the SQ2361AEES-T1_BE3 helps to minimize power dissipation and improve efficiency in power electronic circuits.
Surface-mount package: The SQ2361AEES-T1_BE3 is available in a surface-mount package, which is compact and easy to integrate into printed circuit board designs.
High switching speed: The SQ2361AEES-T1_BE3 has a fast switching speed, which makes it suitable for use in high-frequency applications.
Applications:
The SQ2361AEES-T1_BE3 is suitable for use in a variety of power electronic applications, including:
Motor control: The SQ2361AEES-T1_BE3 can be used in motor control circuits to control the speed and direction of motors in applications such as robotics, industrial automation, and automotive systems.
Power supplies: The SQ2361AEES-T1_BE3 can be used in power supply circuits to regulate the voltage and current supplied to a load.
DC-DC converters: The SQ2361AEES-T1_BE3 can be used in DC-DC converter circuits to convert a DC voltage from one level to another, for example, to provide a stable voltage supply to electronic devices.
Overall, the SQ2361AEES-T1_BE3 is a high-performance MOSFET transistor that offers high voltage and current handling capabilities, low on-state resistance, and fast switching speeds, making it suitable for use in a variety of power electronic applications.
Tech Specifications
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Qualification
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
SQ2361AEES-T1_BE3 Documents
Download datasheets and manufacturer documentation for SQ2361AEES-T1_BE3
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service