Vishay / Siliconix_SQ3585EV-T1_GE3
original

Vishay / Siliconix
SQ3585EV-T1_GE3

289-SQ3585EV-T1_GE3
PDF Datasheet
MOSFET N/P-CH 20V 3.57A 6TSOP
17 Weeks

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Tech Specifications

Operating Temperature
-55°C ~ 175°C (TJ)
FET Feature
-
Configuration
N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds
-
Gate Charge (Qg) (Max) @ Vgs
2.5nC @ 4.5V, 3.5nC @ 4.5V
ECCN
EAR99
Grade
Automotive
Mounting Type
Surface Mount
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SQ3585EV-T1_GE3 Description

The SQ3585EV-T1_GE3 is a high voltage, high-power MOSFET from Vishay Siliconix. It is designed for use in a variety of power electronic applications, including motor drives, power supplies, and renewable energy systems.

Description:

The SQ3585EV-T1_GE3 is a N-channel, logic level MOSFET with a voltage rating of 100V and a continuous drain current of 42A. It features a low on-state resistance (RDS(on)) of 4.5mΩ max, which allows for efficient power transfer with minimal power loss. The device is available in a TO-220 package, which is suitable for use in a variety of power electronic applications.

Features:

  • High voltage rating of 100V
  • Continuous drain current of 42A
  • Low on-state resistance (RDS(on)) of 4.5mΩ max
  • Logic level gate drive for easy integration with digital control circuits
  • High switching speed for efficient power conversion
  • Robust construction for reliable operation in demanding environments

Applications:

The SQ3585EV-T1_GE3 is suitable for use in a variety of power electronic applications, including:

  • Motor drives for industrial automation and robotics
  • Power supplies for telecommunications and computing equipment
  • Renewable energy systems, such as solar panel inverters and wind turbine converters
  • Battery charging and management systems for electric vehicles and energy storage
  • High-power switching applications in industrial and commercial equipment

Overall, the SQ3585EV-T1_GE3 is a high-performance MOSFET that offers excellent efficiency and reliability for a wide range of power electronic applications. Its high voltage rating, low on-state resistance, and fast switching speed make it an ideal choice for designers looking to improve the performance and efficiency of their power electronic systems.

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