Vishay / Siliconix_SQ3985EV-T1_GE3

Vishay / Siliconix
SQ3985EV-T1_GE3  
FET, MOSFET Arrays

Vishay / Siliconix
SQ3985EV-T1_GE3
289-SQ3985EV-T1_GE3
Ersa
Vishay / Siliconix-SQ3985EV-T1_GE3-datasheets-8827506.pdf
MOSFET 2P-CH 20V 3.9A 6TSOP
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    SQ3985EV-T1_GE3 Description

    Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The FET, MOSFET Arrays that the SQ3985EV-T1_GE3 belongs to can be classified under the Discrete Semiconductors. SQ3985EV-T1_GE3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SQ3985EV-T1_GE3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay / Siliconix plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay / Siliconix is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay / Siliconix builds trust with consumers and enhances the overall reputation of their products.

    Tech Specifications

    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Product Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Package / Case
    Technology
    REACH Status
    Mfr
    RoHS Status
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    FET Feature
    ECCN
    Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Series
    Qualification
    Power - Max
    Current - Continuous Drain (Id) @ 25°C
    HTSUS
    Package
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Channel Mode
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    SQ3985EV-T1_GE3 Documents

    Download datasheets and manufacturer documentation for SQ3985EV-T1_GE3

    Ersa SQ3985EV      
    Ersa SQ3985EV      

    Shopping Guide

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