Vishay / Siliconix_SUM90N10-8M2P-E3

Vishay / Siliconix
SUM90N10-8M2P-E3  
Single FETs, MOSFETs

Vishay / Siliconix
SUM90N10-8M2P-E3
278-SUM90N10-8M2P-E3
Ersa
Vishay / Siliconix-SUM90N10-8M2P-E3-datasheets-9259855.pdf
MOSFET N-CH 100V 90A TO263
In Stock : 258

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    SUM90N10-8M2P-E3 Description

    The SUM90N10-8M2P-E3 is a high-power, high-voltage MOSFET transistor manufactured by Vishay Siliconix. It is designed for use in a variety of applications, including power electronics, motor control, and switch mode power supplies (SMPS).

    Description:

    The SUM90N10-8M2P-E3 is an N-channel MOSFET with a breakdown voltage (V(BR)) of 900V. It has a continuous drain current (I(D)) of 10A and a pulsed drain current (I(D)) of 80A. The device has a low on-state resistance (R(DS(ON))) of 8.2 mOhm max, which helps to minimize power dissipation and improve efficiency.

    Features:

    • High breakdown voltage (V(BR)) of 900V
    • Continuous drain current (I(D)) of 10A
    • Pulsed drain current (I(D)) of 80A
    • Low on-state resistance (R(DS(ON))) of 8.2 mOhm max
    • High input impedance
    • Fast switching speeds
    • Low gate charge
    • Suitable for use in high-temperature environments

    Applications:

    The SUM90N10-8M2P-E3 is suitable for use in a variety of applications, including:

    1. Power electronics
    2. Motor control
    3. Switch mode power supplies (SMPS)
    4. Battery protection circuits
    5. Inverters
    6. DC-DC converters
    7. Industrial control systems
    8. Renewable energy systems

    The device is available in a TO-220AB package, which is a popular package for power MOSFETs due to its ability to dissipate high amounts of heat. The SUM90N10-8M2P-E3 is a high-performance device that offers excellent electrical characteristics and is suitable for use in a wide range of applications.

    Tech Specifications

    FET Type
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Product Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Power Dissipation (Max)
    Package / Case
    Technology
    REACH Status
    Mfr
    Vgs (Max)
    RoHS Status
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    FET Feature
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Series
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Base Product Number
    Unit Weight
    Configuration
    Id - Continuous Drain Current
    Channel Mode
    RoHS
    Qg - Gate Charge
    Tradename
    Number of Channels
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Length
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    SUM90N10-8M2P-E3 Documents

    Download datasheets and manufacturer documentation for SUM90N10-8M2P-E3

    Ersa SUM90N10 21/Jun/2021      
    Ersa SUM90N10-8M2P      
    Ersa SUM90N10-8M2P      

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