Wolfspeed_C3M0065090D
original

Wolfspeed
C3M0065090D

278-C3M0065090D
PDF Datasheet
SICFET N-CH 900V 36A TO247-3
34 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
14
Maximum Gate Source Leakage Current (nA)
250
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs
30.4 nC @ 15 V
Typical Rise Time (ns)
10
PPAP
No
Channel Mode
Enhancement
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C3M0065090D Description

Wolfspeed's C3M0065090D is a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) device. Here is a description of the model, its features, and potential applications:

Model: C3M0065090D

Description:

The C3M0065090D is a high-performance SiC MOSFET designed for use in high-power and high-temperature applications. It leverages the advantages of SiC technology, such as high thermal conductivity, high breakdown voltage, and fast switching capabilities.

Features:

  1. Material: Silicon Carbide (SiC) - Offers superior thermal properties and higher voltage capabilities compared to traditional silicon-based devices.
  2. Voltage Rating: The device is designed to handle high voltages, making it suitable for applications requiring high-voltage operation.
  3. Low On-Resistance (RDS(on)): The low on-resistance of the SiC MOSFET contributes to higher efficiency and lower power losses during operation.
  4. Fast Switching Speed: SiC MOSFETs can switch at higher frequencies, reducing the size and weight of passive components in the system.
  5. High-Temperature Operation: Capable of operating at elevated temperatures, which can extend the life of the device and enable its use in harsh environments.
  6. Robustness: SiC MOSFETs are known for their robustness and ability to withstand high-energy pulses and high dv/dt rates.
  7. Gate Drive Requirement: The device has specific gate drive requirements that need to be met to ensure proper operation and to avoid damage.

Applications:

  1. Electric Vehicle (EV) Charging Stations: Due to their high efficiency and fast switching capabilities, SiC MOSFETs are ideal for EV charging stations, enabling faster charging times and reducing the size of the charging infrastructure.
  2. Solar Inverters: In solar power applications, SiC MOSFETs can improve the efficiency of solar inverters, leading to better overall system performance and a reduction in energy losses.
  3. Power Supplies: SiC MOSFETs can be used in high-power-density power supplies, such as those found in industrial and computing applications, to improve efficiency and reduce thermal management challenges.
  4. Motor Drives: In motor drive applications, the fast switching and high-temperature capabilities of SiC MOSFETs can lead to more compact and efficient motor control systems.
  5. High-Voltage Direct Current (HVDC) Systems: SiC MOSFETs are suitable for HVDC transmission systems, where high voltage and high efficiency are critical.
  6. Renewable Energy Systems: In wind turbines and other renewable energy systems, SiC MOSFETs can improve the efficiency of power conversion and reduce system costs.

It's important to note that the specific features and applications of the C3M0065090D may vary, and it is always recommended to consult the datasheet and technical documentation provided by Wolfspeed for detailed information and to ensure that the device meets the requirements of a particular application.

FAQ

What is the mounting type of C3M0065090D?
C3M0065090D uses a Through Hole mounting style based on the listed product specifications.
Does C3M0065090D have quantity-based pricing?
Is C3M0065090D currently in stock?
What package or case is C3M0065090D available in?
What operating temperature range does C3M0065090D support?
Availability (In Stock : 57 )
Quantity Unit Price Ext. Price
1+ $15.69257 $15.69
10+ $15.00515 $150.05
30+ $13.81372 $414.41
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