STGD20N45LZAG

STGD20N45LZAG is a high-performance N-channel power MOSFET manufactured by STMicroelectronics, designed for efficient switching applications in industrial and consumer electronics. It features a maximum drain-source voltage (VDS) of 450 V, enabling it to handle high-voltage circuits with reliability and safety. The device offers a low on-resistance (RDS(on)) of 1.3 Ω at VGS = 10 V, which minimizes conduction losses and improves overall system efficiency—ideal for energy-sensitive designs such as power supplies and motor drives. This MOSFET utilizes advanced trench technology to optimize gate charge (Qg) and switching speed, reducing switching losses and enhancing performance in high-frequency applications. Its robust construction supports a continuous drain current (ID) of 20 A at 25°C junction temperature, making it suitable for demanding environments where thermal stability and long-term reliability are critical. Additionally, the device includes an integrated antiparallel diode, simplifying circuit design in applications like inverters and buck-boost converters. The STGD20N45LZAG is housed in a TO-220 package, providing excellent thermal dissipation and mechanical durability for easy mounting and integration into PCBs. It is fully compliant with RoHS standards and engineered for operation across a wide temperature range from -55°C to +175°C, ensuring consistent performance in harsh conditions. The device also features a high avalanche energy capability, offering protection against transient overvoltage events common in inductive load switching. Its primary applications include switched-mode power supplies (SMPS), DC-DC converters, motor control systems, and industrial automation equipment. The combination of high voltage tolerance, low on-resistance, and fast switching makes it particularly effective in energy-efficient designs requiring minimal heat generation and high power density. In renewable energy systems such as solar inverters and battery chargers, this MOSFET contributes to improved conversion efficiency and reduced system complexity due to its integrated diode and stable thermal characteristics.