The STGD20N45LZAG is a high-performance, single insulated gate bipolar transistor (IGBT) designed and manufactured by STMicroelectronics. This device is specifically engineered for automotive applications, offering superior electrical characteristics and robust performance. With a maximum collector-emitter breakdown voltage of 450V, it can handle high voltage applications with ease. The STGD20N45LZAG is designed to operate within a wide temperature range, making it suitable for various harsh environments.
The STGD20N45LZAG is particularly well-suited for applications requiring high power and voltage management in the automotive sector. Some specific use cases include:
The STGD20N45LZAG from STMicroelectronics stands out as a reliable and efficient solution for high-voltage, high-power applications in the automotive industry. Its combination of high breakdown voltage, fast switching speed, and compliance with industry standards make it a preferred choice for engineers designing next-generation automotive systems. With its automotive-grade rating and robust performance, the STGD20N45LZAG is a key component in the evolution of electric and hybrid vehicle technology.
Download datasheets and manufacturer documentation for STGD20N45LZAG