STH315N10F7-2

STH315N10F7-2 is a high-performance N-channel MOSFET manufactured by STMicroelectronics, designed for efficient power switching applications. It features a maximum drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 315 A at 25°C junction temperature, making it suitable for high-current power management systems. The device exhibits a low on-resistance (RDS(on)) of just 0.007 Ω at VGS = 10 V, which significantly reduces conduction losses and enhances energy efficiency in power conversion circuits. This MOSFET is optimized for fast switching speeds, with a typical gate charge (Qg) of 840 nC, enabling reduced switching losses and improved thermal performance in high-frequency applications such as DC-DC converters, motor drives, and inverters. Its robust construction includes an advanced trench technology that ensures excellent thermal stability and reliability under demanding operating conditions. Additionally, the device is protected against avalanche breakdown, providing enhanced safety in inductive load scenarios. The STH315N10F7-2 is packaged in a TO-247-3L format, offering reliable mechanical and electrical connections while facilitating easy mounting and heat dissipation via a thermally enhanced tab. This package design supports efficient cooling in industrial and automotive environments where space constraints and thermal management are critical. It finds wide application in industrial power supplies, renewable energy systems like solar inverters, electric vehicle (EV) chargers, and server power modules. In these contexts, its ability to handle high current and voltage levels with minimal power loss makes it ideal for boosting system efficiency and reducing overall energy consumption. The device also meets stringent environmental standards, including RoHS compliance, ensuring safe and sustainable operation across global markets. Engineered for durability and consistent performance, the STH315N10F7-2 operates reliably over a broad temperature range from -55°C to +175°C junction temperature, allowing deployment in harsh environments such as outdoor power electronics and heavy machinery. Its compatibility with standard drive voltages and robust gate oxide structure further simplifies integration into existing designs without requiring complex driver circuitry.