The Gate Driver is a critical component within Automotive Electronics, specifically in the Electrification & Battery Systems domain. It serves as an interface between the control unit and the power semiconductor devices, such as MOSFETs or IGBTs, in DC-DC Converters. The primary function of a Gate Driver is to provide the necessary voltage and current to switch these power devices on and off efficiently, ensuring reliable and safe operation.
Gate Drivers are essential in electric and hybrid vehicles, where they manage the high-voltage systems and support the conversion of electrical energy between different voltage levels. They play a key role in maintaining system efficiency, reducing power losses, and enhancing overall performance. Additionally, they contribute to the protection of the power electronics by providing features like overcurrent, undervoltage, and thermal shutdown.
In applications such as battery management, motor control, and power supply units, Gate Drivers ensure precise control and stability. Their design must accommodate high-speed switching, electromagnetic compatibility (EMC), and robustness under harsh automotive conditions. With the increasing demand for electrified vehicles, the importance of advanced Gate Drivers continues to grow, supporting the development of more efficient and safer automotive systems.
Series Name | Description | Manufacturer Name | Attribute Description |
---|---|---|---|
Microchip Technology | Quad high-side/low-side driver, 45V supply, 0.4A output current, SPI interface, wide temperature range, integrated diagnostics, low quiescent current, suitable for automotive applications. | ||
Microchip Technology | 3.3V/5V input, up to 60V output, 1.5A switch current, 500kHz PWM frequency, adjustable output voltage, integrated MOSFET, thermal shutdown, over-voltage protection, 8-pin SOIC package. | ||
Microchip Technology | 3-phase gate driver IC, 10–28 V supply, high-side/low-side drivers, integrated charge pump, 200 mA source/sink current, supports BLDC/PMSM motors, UVLO, overtemperature protection. | ||
onsemi | 36 V, 1.5 A synchronous buck controller; input voltage: 4.5–36 V; output adjustable down to 0.8 V; up to 1 MHz switching frequency; integrated high-side MOSFET driver. | ||
onsemi | 5.0 V fixed output, 5 A max current, low dropout voltage, enable pin, thermal shutdown, overcurrent protection, 3 mm × 3 mm DFN package, operates from 5.5 V to 20 V input. | ||
onsemi | Isolated gate driver with 5.7 kVrms isolation, 2.5 A peak output current, 50 ns propagation delay, 2.7 V to 5.5 V input supply, suitable for high-speed switching applications in power electronics. | ||
onsemi | Isolated gate driver, 5.7 kV RMS isolation, 2.5 A peak output current, 60 ns propagation delay, 100 kV/µs CMTI, 4.5 V to 18 V supply, SOIC-8 package. | ||
onsemi | 60V, 6A Schottky barrier rectifier; low forward voltage drop; high surge current capability; surface mount package; ideal for power rectification and reverse polarity protection. | ||
onsemi | 60V, 6A, N-channel MOSFET, 12mΩ Rds(on), 1.8V logic level, high efficiency, TO-252 package, suitable for power management and switching applications. | ||
onsemi | High-performance current-mode PWM controller for offline SMPS, 1A peak gate drive, 100kHz switching frequency, UVLO, OVP protection, low standby current. |