Diodes Incorporated_DMN10H120SE-13
original

Diodes Incorporated
DMN10H120SE-13

278-DMN10H120SE-13
PDF Datasheet
MOSFET N-CH 100V 3.6A SOT223
8 Weeks

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Tech Specifications

Configuration
Single Dual Drain
Typical Turn-Off Delay Time (ns)
11
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
549 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Typical Rise Time (ns)
1.8
PPAP
No
Channel Mode
Enhancement
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DMN10H120SE-13 Description

DMN10H120SE-13 Description

The DMN10H120SE-13 is a high-performance MOSFET (Metal Oxide) from Diodes Incorporated, designed for applications requiring high voltage and current capabilities. This N-channel MOSFET features a drain to source voltage (Vdss) of 100V and a continuous drain current (Id) of 3.6A at 25°C. The device is available in a SOT223 package, making it suitable for surface mount applications. With a maximum power dissipation of 1.3W and a low Rds On of 110mOhm at 3.3A and 10V, the DMN10H120SE-13 offers excellent performance and efficiency.

DMN10H120SE-13 Features

  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 3.6A at 25°C
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max): 110mOhm @ 3.3A, 10V
  • Gate Charge (Qg) (Max): 10 nC @ 10V
  • Input Capacitance (Ciss) (Max): 549 pF @ 50V
  • Vgs (Max): ±20V
  • Vgs(th) (Max): 3V @ 250µA
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

DMN10H120SE-13 Applications

The DMN10H120SE-13 is ideal for applications that require high voltage and current handling capabilities, such as:

  • Power Management: In power supplies, battery management systems, and motor control applications.
  • Industrial Control: For high-voltage motor drives and industrial automation systems.
  • Automotive: In electric vehicle (EV) charging systems, battery management, and power electronics.
  • Telecommunications: For power amplifiers and signal processing in communication infrastructure.

Conclusion of DMN10H120SE-13

The DMN10H120SE-13 from Diodes Incorporated is a versatile and high-performance MOSFET, offering excellent voltage and current handling capabilities in a compact SOT223 package. Its low Rds On and high gate charge make it an ideal choice for applications requiring high efficiency and fast switching. With its REACH unaffected and RoHS3 compliant status, the DMN10H120SE-13 is a reliable and environmentally friendly solution for a wide range of high-voltage and high-current applications.

FAQ

What package or case is DMN10H120SE-13 available in?
DMN10H120SE-13 is available in the TO-261-4, TO-261AA package / case.
What is DMN10H120SE-13?
What operating temperature range does DMN10H120SE-13 support?
What is the mounting type of DMN10H120SE-13?
Is DMN10H120SE-13 currently in stock?
Availability (In Stock : 7043 )
Quantity Unit Price Ext. Price
10+ $0.36172 $3.62
30+ $0.32743 $9.82
100+ $0.28457 $28.46
500+ $0.26572 $132.86
1000+ $0.25543 $255.43
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