Diodes Incorporated_DMN10H220LE-13
original

Diodes Incorporated
DMN10H220LE-13

278-DMN10H220LE-13
PDF Datasheet
MOSFET N-CH 100V 2.3A SOT223
8 Weeks

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Tech Specifications

Configuration
Single Dual Drain
Typical Turn-Off Delay Time (ns)
7.9
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
401 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Typical Rise Time (ns)
8.2
PPAP
No
Channel Mode
Enhancement
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DMN10H220LE-13 Description

DMN10H220LE-13 Description

The DMN10H220LE-13 is a high-performance MOSFET N-CH 100V 2.3A SOT223 from Diodes Incorporated. This single FET is designed for demanding applications that require high efficiency and reliability. With a maximum drain-to-source voltage of 100V and a continuous drain current of 2.3A at 25°C, this device is ideal for a wide range of power management and switching applications.

DMN10H220LE-13 Features

  • Technology: MOSFET (Metal Oxide) - Provides excellent electrical properties and high reliability.
  • Input Capacitance (Ciss): 401 pF @ 25 V - Minimizes input capacitance for faster switching speeds.
  • Gate Charge (Qg): 8.3 nC @ 10 V - Reduces switching losses and improves efficiency.
  • Drain to Source Voltage (Vdss): 100 V - Suitable for high-voltage applications.
  • Power Dissipation (Max): 1.8W (Ta) - Capable of handling high power loads.
  • Rds On (Max): 220mOhm @ 1.6A, 10V - Offers low on-resistance for minimal power dissipation.
  • Vgs(th) (Max): 2.5V @ 250µA - Ensures reliable threshold voltage performance.
  • Mounting Type: Surface Mount - Facilitates easy integration into PCB designs.
  • RoHS Status: ROHS3 Compliant - Meets environmental regulations for safe disposal.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Resistant to moisture, reducing the risk of damage during manufacturing and storage.

DMN10H220LE-13 Applications

The DMN10H220LE-13 is ideal for applications that demand high efficiency, reliability, and performance. Some specific use cases include:

  • Power Management: In power supply designs where high efficiency and low power dissipation are critical.
  • Motor Control: For driving motors in industrial and automotive applications, providing precise control and high power handling.
  • Switching Applications: In high-voltage switching circuits where low on-resistance and fast switching speeds are required.

Conclusion of DMN10H220LE-13

The DMN10H220LE-13 from Diodes Incorporated is a high-performance MOSFET designed for demanding applications. Its unique features, such as low on-resistance, high voltage handling, and fast switching speeds, make it an excellent choice for power management, motor control, and switching applications. With its RoHS compliance and moisture resistance, this device is not only efficient but also environmentally friendly and reliable. The DMN10H220LE-13 is a top choice for engineers looking to improve the performance and reliability of their electronic designs.

FAQ

What package or case is DMN10H220LE-13 available in?
DMN10H220LE-13 is available in the TO-261-4, TO-261AA package / case.
Does DMN10H220LE-13 have quantity-based pricing?
What is DMN10H220LE-13?
What is the mounting type of DMN10H220LE-13?
Is DMN10H220LE-13 currently in stock?
Availability (In Stock : 53 )
Quantity Unit Price Ext. Price
1+ $0.43885 $0.44
10+ $0.42857 $4.29
30+ $0.42343 $12.70
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