Diodes Incorporated_DMN10H170SK3-13
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Diodes Incorporated
DMN10H170SK3-13

278-DMN10H170SK3-13
PDF Datasheet
MOSFET N-CH 100V 12A TO252-3
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
42.6
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
9.7 nC @ 10 V
Typical Rise Time (ns)
11.1
PPAP
No
Channel Mode
Enhancement
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DMN10H170SK3-13 Description

DMN10H170SK3-13 Description

The DMN10H170SK3-13 is a high-performance N-Channel MOSFET from Diodes Incorporated, designed for applications requiring high efficiency and reliability. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 12A at 25°C, this device is ideal for power management and motor control applications. The DMN10H170SK3-13 is manufactured using advanced MOSFET technology, ensuring low on-resistance and high switching speeds for improved performance.

DMN10H170SK3-13 Features

  • Low On-Resistance: The DMN10H170SK3-13 boasts a maximum Rds(on) of 140mΩ at 5A and 10V, reducing power dissipation and improving efficiency in high-current applications.
  • High Input Capacitance: With a maximum input capacitance (Ciss) of 1167pF at 25V, this device offers fast switching speeds and reduced switching losses.
  • Low Gate Charge: The maximum gate charge (Qg) of 9.7nC at 10V minimizes gate drive power requirements, making it suitable for energy-efficient designs.
  • Robust Package: The TO252-3 package provides excellent thermal performance and mechanical stability, ensuring reliable operation in demanding environments.
  • Compliance: The DMN10H170SK3-13 is REACH unaffected and RoHS3 compliant, making it suitable for environmentally conscious designs.

DMN10H170SK3-13 Applications

The DMN10H170SK3-13 is ideal for a wide range of applications, including:

  • Power Management: Its low on-resistance and high current capability make it suitable for power conversion and distribution in consumer electronics and industrial systems.
  • Motor Control: The device's high voltage and current ratings, combined with its fast switching speeds, make it an excellent choice for brushless DC motor control in automotive and industrial applications.
  • Battery Management: The DMN10H170SK3-13 can be used in battery protection circuits to prevent overcharging and over-discharging, extending battery life and ensuring safety.

Conclusion of DMN10H170SK3-13

The DMN10H170SK3-13 is a versatile and high-performance N-Channel MOSFET that offers excellent efficiency and reliability for a wide range of applications. Its low on-resistance, high input capacitance, and compliance with environmental regulations make it an ideal choice for power management, motor control, and battery management systems. With its advanced technology and robust package, the DMN10H170SK3-13 is a reliable solution for demanding applications in the electronics industry.

FAQ

What operating temperature range does DMN10H170SK3-13 support?
DMN10H170SK3-13 has an operating temperature range of -55°C ~ 150°C (TJ).
What package or case is DMN10H170SK3-13 available in?
What is the mounting type of DMN10H170SK3-13?
Is DMN10H170SK3-13 currently in stock?
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Availability (In Stock : 2097 )
Quantity Unit Price Ext. Price
5+ $0.35717 $1.79
50+ $0.28548 $14.27
150+ $0.25476 $38.21
500+ $0.21641 $108.20
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