Diodes Incorporated_DMN2019UTS-13
original

Diodes Incorporated
DMN2019UTS-13

289-DMN2019UTS-13
PDF Datasheet
MOSFET 2N-CH 20V 5.4A 8TSSOP
8 Weeks

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Tech Specifications

Configuration
2 N-Channel (Dual) Common Drain
Typical Turn-Off Delay Time (ns)
562
Maximum Gate Source Leakage Current (nA)
10000
Input Capacitance (Ciss) (Max) @ Vds
143pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
8.8nC @ 4.5V
Typical Rise Time (ns)
78
PPAP
No
Channel Mode
Enhancement
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DMN2019UTS-13 Description

DMN2019UTS-13 Description

The DMN2019UTS-13 is a high-performance MOSFET (Metal Oxide) device manufactured by Diodes Incorporated. It is designed to offer excellent electrical characteristics and reliability in a compact 8-pin TSSOP package. With a maximum drain-source voltage (Vdss) of 20V, continuous drain current (Id) of 5.4A, and maximum power dissipation of 780mW, this device is ideal for a wide range of applications in the electronics industry.

DMN2019UTS-13 Features

  • Logic Level Gate: The DMN2019UTS-13 features a logic level gate, making it compatible with standard logic level inputs.
  • Low Input Capacitance: With a maximum input capacitance (Ciss) of 143pF @ 10V, this device offers fast switching speeds and low power consumption.
  • Low Gate Charge: The maximum gate charge (Qg) is 8.8nC @ 4.5V, which contributes to reduced switching losses and improved efficiency.
  • Low Rds On: The maximum Rds On is 18.5mOhm @ 7A, 10V, ensuring low on-resistance and minimal power dissipation.
  • High Vgs(th): The maximum Vgs(th) is 950mV @ 250µA, providing robust gate drive and improved noise immunity.
  • Surface Mount: The DMN2019UTS-13 is available in a surface mount package, making it suitable for high-density PCB layouts.
  • RoHS Compliant: This device is compliant with the RoHS3 directive, ensuring environmental compatibility.

DMN2019UTS-13 Applications

The DMN2019UTS-13 is ideal for various applications where high performance and reliability are crucial. Some specific use cases include:

  1. Power Management: Due to its low Rds On and high Vdss, this device is suitable for power management applications, such as voltage regulation and power distribution.
  2. Motor Control: The DMN2019UTS-13 can be used in motor control applications, where high current and voltage ratings are required.
  3. Automotive Electronics: This device is suitable for automotive electronics, such as infotainment systems and power windows, due to its robust performance and reliability.
  4. Industrial Control: The DMN2019UTS-13 can be used in industrial control applications, such as motor drives and power supplies, where high performance and reliability are essential.

Conclusion of DMN2019UTS-13

The DMN2019UTS-13 is a versatile and high-performance MOSFET device that offers excellent electrical characteristics and reliability. Its unique features, such as low input capacitance, low gate charge, and high Vgs(th), make it an ideal choice for a wide range of applications in the electronics industry. With its compact TSSOP package and RoHS compliance, the DMN2019UTS-13 is a reliable and environmentally friendly solution for your next design.

FAQ

Are there related or alternative parts for DMN2019UTS-13?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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Availability (In Stock : 169 )
Quantity Unit Price Ext. Price
5+ $0.37068 $1.85
50+ $0.29497 $14.75
150+ $0.26252 $39.38
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