Diodes Incorporated_DMN30H4D0LFDE-7
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Diodes Incorporated
DMN30H4D0LFDE-7

278-DMN30H4D0LFDE-7
PDF Datasheet
MOSFET N-CH 300V 550MA 6UDFN
8 Weeks

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Tech Specifications

Configuration
Single Quad Drain
Typical Turn-Off Delay Time (ns)
25.8
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
187.3 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
7.6 nC @ 10 V
Typical Rise Time (ns)
4.7
PPAP
No
Channel Mode
Enhancement
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DMN30H4D0LFDE-7 Description

DMN30H4D0LFDE-7 Description

The DMN30H4D0LFDE-7 is a high-performance N-Channel MOSFET from Diodes Incorporated, designed for applications requiring robust power management and efficient switching capabilities. This MOSFET features a 300V drain-to-source voltage rating and can handle a continuous drain current of 550mA at 25°C, making it suitable for a wide range of power electronics applications.

DMN30H4D0LFDE-7 Features

  • High Input Capacitance (Ciss): With a maximum input capacitance of 187.3 pF at 25V, the DMN30H4D0LFDE-7 offers fast switching performance and minimal input capacitance variation over voltage, ensuring reliable operation in high-frequency applications.
  • Low Gate Charge (Qg): The maximum gate charge of 7.6 nC at 10V contributes to the device's fast switching speed and low power consumption.
  • Surface Mount Technology: The DMN30H4D0LFDE-7 is designed for surface mount applications, providing a compact footprint and ease of integration into various electronic systems.
  • Low Rds On: With a maximum Rds On of 4 Ohms at 300mA and 10V, the DMN30H4D0LFDE-7 offers low on-resistance, reducing power dissipation and improving efficiency in power management applications.
  • Compliance with Industry Standards: The DMN30H4D0LFDE-7 is compliant with the RoHS3 directive, making it suitable for environmentally conscious designs. Additionally, it is classified as EAR99, indicating that it is not subject to export controls.

DMN30H4D0LFDE-7 Applications

The DMN30H4D0LFDE-7 is ideal for a variety of applications where high voltage, low power dissipation, and fast switching are required. Some specific use cases include:

  • Power Management Circuits: The device's high voltage rating and low on-resistance make it suitable for power management circuits in consumer electronics, industrial equipment, and automotive systems.
  • Motor Control Applications: The DMN30H4D0LFDE-7's ability to handle high voltage and current, along with its fast switching capabilities, make it an excellent choice for motor control applications, such as brushless DC motors and stepper motors.
  • Switching Regulators: The low gate charge and high input capacitance of the DMN30H4D0LFDE-7 contribute to its suitability for switching regulators, where fast switching and low power dissipation are critical.

Conclusion of DMN30H4D0LFDE-7

The DMN30H4D0LFDE-7 is a versatile N-Channel MOSFET that offers a combination of high voltage, low on-resistance, and fast switching capabilities. Its compliance with industry standards and compact surface mount design make it an ideal choice for a wide range of power electronics applications, including power management circuits, motor control, and switching regulators. With its unique features and advantages over similar models, the DMN30H4D0LFDE-7 is a reliable and efficient solution for demanding electronic systems.

FAQ

What voltage specification is listed for DMN30H4D0LFDE-7?
The listed voltage-related specification for DMN30H4D0LFDE-7 is 300 V.
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