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AUIRF7739L2TR

AUIRF7739L2TR Description

The AUIRF7739L2TR from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. With a 40V drain-to-source voltage (Vdss) and 46A continuous drain current (Id) at 25°C, this device delivers robust power handling in a compact DirectFET™ Isometric L8 package. Its ultra-low on-resistance (Rds(on)) of 1mΩ at 160A, 10V ensures minimal conduction losses, making it ideal for high-efficiency switching applications. The MOSFET leverages HEXFET® technology, providing superior thermal performance and reliability.

AUIRF7739L2TR Features

• Low Rds(on): 1mΩ @ 160A, 10V for high-current efficiency.
• High Current Capability: 270A (Tc) pulsed current support.
• Optimized Gate Charge (Qg): 330nC @ 10V for fast switching.
• Thermal Performance: 125W (Tc) power dissipation in a surface-mount package.
• Robust Construction: DirectFET™ packaging enhances thermal conductivity and reduces PCB footprint.
• Wide Vgs Range: ±20V gate-source voltage tolerance.
• Compliance: ROHS3, REACH Unaffected, and ECCN EAR99 certified.

AUIRF7739L2TR Applications

This MOSFET excels in high-power, high-frequency applications, including:

• DC-DC Converters: Efficient power conversion in telecom and server PSUs.
• Motor Drives: High-current switching in industrial and automotive systems.
• Battery Management Systems (BMS): Low-loss switching for Li-ion protection circuits.
• Synchronous Rectification: Improves efficiency in SMPS designs.
• Automotive Power Distribution: Reliable performance in 12V/24V systems.

Conclusion of AUIRF7739L2TR

The AUIRF7739L2TR stands out for its ultra-low Rds(on), high current handling, and superior thermal performance, making it a top choice for power electronics designers. Its DirectFET™ package offers space savings and improved heat dissipation, while Infineon’s HEXFET® technology ensures reliability in harsh environments. Whether for industrial, automotive, or computing applications, this MOSFET delivers efficiency, durability, and compact integration.