The AUIRF7739L2TR from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. With a 40V drain-to-source voltage (Vdss) and 46A continuous drain current (Id) at 25°C, this device delivers robust power handling in a compact DirectFET™ Isometric L8 package. Its ultra-low on-resistance (Rds(on)) of 1mΩ at 160A, 10V ensures minimal conduction losses, making it ideal for high-efficiency switching applications. The MOSFET leverages HEXFET® technology, providing superior thermal performance and reliability.
This MOSFET excels in high-power, high-frequency applications, including:
The AUIRF7739L2TR stands out for its ultra-low Rds(on), high current handling, and superior thermal performance, making it a top choice for power electronics designers. Its DirectFET™ package offers space savings and improved heat dissipation, while Infineon’s HEXFET® technology ensures reliability in harsh environments. Whether for industrial, automotive, or computing applications, this MOSFET delivers efficiency, durability, and compact integration.
Download datasheets and manufacturer documentation for AUIRF7739L2TR