Infineon Technologies

BFP650H6327XTSA1  

Bipolar RF Transistors

BFP650H6327XTSA1 Description

The BFP650H6327XTSA1 is a high-performance Bipolar RF Transistor from Infineon Technologies, designed to meet the demands of modern electronic applications. With an operating temperature of 150°C (TJ) and a frequency transition of 37GHz, this NPN transistor offers exceptional performance in high-frequency applications. The device is surface-mounted, making it ideal for compact designs, and it is currently active in the market.

BFP650H6327XTSA1 Features

• Technical Specifications: The BFP650H6327XTSA1 boasts a maximum collector current (Ic) of 150mA and can handle a maximum power of 500mW. It has a voltage collector-emitter breakdown of 4.5V, ensuring reliable operation under various conditions. The device is compliant with RoHS3 and REACH regulations, making it environmentally friendly.

• Performance Benefits: This transistor offers a noise figure ranging from 0.8dB to 1.9dB at frequencies between 1.8GHz and 6GHz, which is crucial for maintaining signal integrity in high-frequency applications. The gain of the BFP650H6327XTSA1 varies from 10.5dB to 21.5dB, providing flexibility in system design.

• Unique Features and Advantages: The BFP650H6327XTSA1 has a minimum DC current gain (hFE) of 110 at 80mA, 3V, which is higher than many similar models, ensuring better signal amplification. Its moisture sensitivity level (MSL) is 1 (Unlimited), making it suitable for a wide range of environments.

BFP650H6327XTSA1 Applications

The BFP650H6327XTSA1 is ideal for applications that require high-frequency signal amplification and low noise figures. Some specific use cases include:

• RF and Microwave Communications: Due to its high-frequency capabilities and low noise figure, it is perfect for use in RF and microwave communication systems.

• Automotive Radar Systems: The device's high operating temperature and frequency transition make it suitable for automotive radar systems that require reliable performance in harsh conditions.

• Satellite Communications: The BFP650H6327XTSA1 can be used in satellite communication systems where high-frequency signal amplification and low noise are critical.

Conclusion of BFP650H6327XTSA1

In conclusion, the BFP650H6327XTSA1 from Infineon Technologies is a high-performance Bipolar RF Transistor that stands out due to its high-frequency capabilities, low noise figure, and robust performance under various conditions. Its unique features make it an excellent choice for high-frequency applications in RF and microwave communications, automotive radar systems, and satellite communications.

BFP650H6327XTSA1 Documents

Download datasheets and manufacturer documentation for BFP650H6327XTSA1

Datasheets :

BFP650      

PCN Packaging :

Reel Cover Tape Chg 16/Feb/2016       Recyclable Glass Carrier 14/Oct/2014      

Other Related Documents :

Part Number Guide      

Simulation Models :

Infineon-RFTransistor-AWR_MWO_Design_Kit-SM-v02_10-EN Spice Model      

Environmental Information :

RoHS Certificate