Infineon Technologies

BSC061N08NS5ATMA1  

Single FETs, MOSFETs

BSC061N08NS5ATMA1 Description

The BSC061N08NS5ATMA1 is a high-performance N-channel MOSFET from Infineon Technologies. It is part of the OptiMOS™ series and is designed for applications requiring high efficiency and reliability. With a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of 82A at 25°C, this MOSFET is suitable for a wide range of power electronic applications.

BSC061N08NS5ATMA1 Features

• Technology: MOSFET (Metal Oxide) - Offers high efficiency and low power loss.
• Input Capacitance (Ciss): 2500 pF @ 40V - Minimizes input capacitance for faster switching.
• Gate Charge (Qg): 33 nC @ 10V - Reduces switching losses and improves efficiency.
• Rds On (Max): 6.1mOhm @ 41A, 10V - Low on-resistance for minimal power dissipation.
• Vgs(th) (Max): 3.8V @ 41µA - Ensures reliable turn-on and stable operation.
• Drive Voltage: 6V (Max Rds On), 10V (Min Rds On) - Provides flexibility in gate drive requirements.
• Power Dissipation: 2.5W (Ta), 74W (Tc) - Capable of handling high power applications.
• Mounting Type: Surface Mount - Ideal for space-constrained designs.
• Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for harsh environments and long-term storage.
• RoHS Status: ROHS3 Compliant - Environmentally friendly and compliant with global regulations.

BSC061N08NS5ATMA1 Applications

The BSC061N08NS5ATMA1 is ideal for various applications where high efficiency, reliability, and performance are crucial. Some specific use cases include:

1. Power Supplies: High-efficiency power conversion in switching power supplies and battery chargers.
2. Motor Control: Reliable operation in motor drive applications, such as electric vehicles and industrial motor control.
3. Renewable Energy: Efficient power management in solar inverters and wind energy systems.
4. Industrial Automation: Reliable control in industrial automation systems and robotics.

Conclusion of BSC061N08NS5ATMA1

The BSC061N08NS5ATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, offering excellent efficiency and reliability for demanding power electronic applications. Its unique features, such as low on-resistance, low gate charge, and high power dissipation capabilities, make it an ideal choice for applications requiring high efficiency and performance. With its RoHS compliance and moisture sensitivity level of 1, the BSC061N08NS5ATMA1 is also environmentally friendly and suitable for harsh environments.

BSC061N08NS5ATMA1 Documents

Download datasheets and manufacturer documentation for BSC061N08NS5ATMA1

PCN Assembly/Origin :

Optimos Site/Mat Chgs 30/May/2022      

Datasheets :

BSC061N08NS5      

Other Related Documents :

Part Number Guide      

HTML Datasheet :

BSC061N08NS5      

Simulation Models :

MOSFET OptiMOS™ 80V N-Channel Spice Model      

PCN Design/Specification :

Mult Dev Mould Chgs 22/Jun/2022      

Environmental Information :

RoHS Certificate