Infineon Technologies_BSP296NH6327XTSA1

Infineon Technologies
BSP296NH6327XTSA1  
Single FETs, MOSFETs

BSP296NH6327XTSA1
278-BSP296NH6327XTSA1
Ersa
Infineon Technologies-BSP296NH6327XTSA1-datasheets-2866774.pdf
MOSFET N-CH 100V 1.2A SOT223-4
In Stock : 22290

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BSP296NH6327XTSA1 Description

BSP296NH6327XTSA1 Description

The BSP296NH6327XTSA1 from Infineon Technologies is a high-performance N-channel MOSFET designed for efficient power management in compact, surface-mount applications. Part of the OptiMOS™ series, this device offers a 100V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 1.2A at 25°C, making it suitable for low-to-medium power switching applications. With an Rds(on) as low as 600mΩ at 10V gate drive, it ensures minimal conduction losses, enhancing energy efficiency. The MOSFET operates within a gate-source voltage (Vgs) range of ±20V and features a low gate threshold voltage (Vgs(th)) of 1.8V, enabling compatibility with low-voltage control circuits. Packaged in SOT223-4 and supplied in Tape & Reel (TR), it is optimized for automated assembly processes.

BSP296NH6327XTSA1 Features

  • Low Gate Charge (Qg): 6.7 nC @ 10V reduces switching losses, improving high-frequency performance.
  • Low Input Capacitance (Ciss): 152.7 pF @ 25V minimizes drive requirements and enhances switching speed.
  • High Efficiency: Optimized Rds(on) and Qg balance ensures superior power handling with minimal heat generation.
  • Robust Construction: ROHS3 Compliant and REACH Unaffected, meeting stringent environmental and safety standards.
  • Wide Operating Range: 4.5V to 10V gate drive flexibility suits both logic-level and standard MOSFET drivers.
  • Reliability: MSL 1 (Unlimited) moisture sensitivity ensures long shelf life and handling ease.

BSP296NH6327XTSA1 Applications

This MOSFET is ideal for:

  • DC-DC Converters: Efficient power conversion in portable devices and industrial power supplies.
  • Load Switching: Low-loss switching in battery management systems (BMS) and power distribution circuits.
  • Motor Control: Compact driver solutions for small motors in automotive and consumer electronics.
  • LED Drivers: High-efficiency dimming and control in lighting applications.
  • Power Management ICs (PMICs): Integration into space-constrained designs requiring reliable switching performance.

Conclusion of BSP296NH6327XTSA1

The BSP296NH6327XTSA1 stands out for its low Rds(on), fast switching, and compact SOT223-4 package, making it a versatile choice for modern power electronics. Its OptiMOS™ technology ensures high efficiency and thermal performance, while its wide Vgs range and low gate charge cater to diverse control requirements. Whether used in DC-DC conversion, motor drives, or LED systems, this MOSFET delivers reliable performance with minimal losses, aligning with the demands of energy-efficient and high-density designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Qualification
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

BSP296NH6327XTSA1 Documents

Download datasheets and manufacturer documentation for BSP296NH6327XTSA1

Ersa BSP296N      
Ersa Mult Dev Cover Tape Chg 9/Mar/2020       Mult Dev Pkg Update 28/May/2020      
Ersa Part Number Guide      
Ersa BSP296N      
Ersa RoHS Certificate      

Shopping Guide

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