The BSP296NH6327XTSA1 from Infineon Technologies is a high-performance N-channel MOSFET designed for efficient power management in compact, surface-mount applications. Part of the OptiMOS™ series, this device offers a 100V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 1.2A at 25°C, making it suitable for low-to-medium power switching applications. With an Rds(on) as low as 600mΩ at 10V gate drive, it ensures minimal conduction losses, enhancing energy efficiency. The MOSFET operates within a gate-source voltage (Vgs) range of ±20V and features a low gate threshold voltage (Vgs(th)) of 1.8V, enabling compatibility with low-voltage control circuits. Packaged in SOT223-4 and supplied in Tape & Reel (TR), it is optimized for automated assembly processes.
This MOSFET is ideal for:
The BSP296NH6327XTSA1 stands out for its low Rds(on), fast switching, and compact SOT223-4 package, making it a versatile choice for modern power electronics. Its OptiMOS™ technology ensures high efficiency and thermal performance, while its wide Vgs range and low gate charge cater to diverse control requirements. Whether used in DC-DC conversion, motor drives, or LED systems, this MOSFET delivers reliable performance with minimal losses, aligning with the demands of energy-efficient and high-density designs.
Download datasheets and manufacturer documentation for BSP296NH6327XTSA1