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IPB60R190C6ATMA1

IPB60R190C6ATMA1 Description

The IPB60R190C6ATMA1 is a high-performance MOSFET N-CH 600V 20.2A D2PAK from Infineon Technologies. This device is part of the CoolMOS™ C6 series, known for its excellent efficiency and performance in power electronics applications. With a maximum drain-to-source voltage of 600V and a continuous drain current of 20.2A at 25°C, the IPB60R190C6ATMA1 is designed to handle high power levels while maintaining low on-resistance.

IPB60R190C6ATMA1 Features

• Technology: MOSFET (Metal Oxide) - Provides high efficiency and low power dissipation.
• Input Capacitance (Ciss): 1400 pF @ 100 V - Minimizes capacitive effects and improves switching performance.
• Gate Charge (Qg): 63 nC @ 10 V - Reduces switching losses and improves efficiency.
• Rds On (Max): 190mOhm @ 9.5A, 10V - Low on-resistance for high current applications.
• Vgs(th) (Max): 3.5V @ 630µA - Ensures reliable turn-on and stable operation.
• Power Dissipation (Max): 151W (Tc) - Capable of handling high power levels in demanding applications.
• Mounting Type: Surface Mount - Ideal for compact and space-constrained designs.
• Package: Tape & Reel (TR) - Facilitates automated assembly and high-volume production.

IPB60R190C6ATMA1 Applications

The IPB60R190C6ATMA1 is ideal for a wide range of high-power applications, including:

1. Power Supplies: Due to its high voltage and current ratings, the IPB60R190C6ATMA1 is well-suited for power supply designs, such as SMPS and DC-DC converters.
2. Industrial Control: Its robust performance makes it suitable for motor drives and industrial automation systems.
3. Renewable Energy: The IPB60R190C6ATMA1 can be used in solar inverters and wind power conversion systems, where high efficiency and reliability are critical.
4. Electric Vehicles: This MOSFET can be employed in the powertrain and charging systems of electric and hybrid vehicles, thanks to its ability to handle high power and voltage.

Conclusion of IPB60R190C6ATMA1

The IPB60R190C6ATMA1 is a powerful and efficient MOSFET from Infineon Technologies, designed for high-power applications. Its low on-resistance, high voltage and current ratings, and excellent switching performance make it an ideal choice for power supplies, industrial control, renewable energy, and electric vehicles. While it is marked as "Not For New Designs," it remains a reliable option for existing designs that require its specific performance characteristics.