Infineon Technologies_IPD60R950C6
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Infineon Technologies
IPD60R950C6

278-IPD60R950C6
PDF Datasheet
MOSFET N-CH 600V 4.4A TO252-3

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Product Status
Discontinued at Digi-Key
Supplier Device Package
PG-TO252-3
Drain to Source Voltage (Vdss)
600 V
Power Dissipation (Max)
37W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
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IPD60R950C6 Description

IPD60R950C6 Description

The IPD60R950C6 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring robust power handling and efficient switching. This device features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 4.4A at 25°C, making it suitable for a wide range of power electronics applications.

IPD60R950C6 Features

  • 600V Drain-to-Source Voltage (Vdss): The IPD60R950C6 can handle high voltages, making it ideal for applications such as power supplies, motor drives, and renewable energy systems.
  • 4.4A Continuous Drain Current (Id): This MOSFET can handle a continuous drain current of 4.4A at 25°C, providing ample current capacity for various power electronics applications.
  • Low Rds On (950mOhm): The low on-resistance of the IPD60R950C6 contributes to high efficiency and reduced power losses in switching applications.
  • 3.5V Gate Threshold Voltage (Vgs(th)): A low gate threshold voltage enables easy gate drive and reduces the power consumption of the gate driver.
  • 37W Power Dissipation (Tc): The IPD60R950C6 can dissipate up to 37W of power, ensuring reliable operation in demanding applications.
  • Surface Mount Packaging: The device is available in a surface-mount package, facilitating integration into compact and space-constrained designs.

IPD60R950C6 Applications

The IPD60R950C6 is well-suited for various power electronics applications, including:

  1. Power Supplies: The high voltage and current ratings make it ideal for power supply designs, such as SMPS (Switched-Mode Power Supplies) and AC/DC converters.
  2. Motor Drives: The device's robust performance characteristics make it suitable for motor control applications, including industrial motor drives and electric vehicle (EV) motor controllers.
  3. Renewable Energy Systems: The IPD60R950C6 can be used in solar inverters and wind power converters, where high voltage and power handling are critical.

Conclusion of IPD60R950C6

The IPD60R950C6 from Infineon Technologies is a versatile and high-performance N-Channel MOSFET designed for demanding power electronics applications. Its combination of high voltage and current ratings, low on-resistance, and robust power dissipation capabilities make it an ideal choice for power supplies, motor drives, and renewable energy systems. With its surface-mount packaging and compliance with industry standards such as RoHS3 and REACH, the IPD60R950C6 offers a reliable and efficient solution for designers looking to optimize their power electronics designs.

FAQ

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