Infineon Technologies_IPD60R950C6ATMA1
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Infineon Technologies
IPD60R950C6ATMA1

278-IPD60R950C6ATMA1
PDF Datasheet
MOSFET N-CH 600V 4.4A TO252-3
20 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
60
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Typical Rise Time (ns)
8
PPAP
No
Channel Mode
Enhancement
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IPD60R950C6ATMA1 Description

IPD60R950C6ATMA1 Description

The IPD60R950C6ATMA1 is a high-performance MOSFET (Metal Oxide) from Infineon Technologies, designed for applications requiring robust power management and efficient switching. With a drain to source voltage (Vdss) of 600V and a continuous drain current (Id) of 4.4A at 25°C, this device is capable of handling high-voltage and high-current applications with ease. The CoolMOS™ C6 series offers superior performance benefits, making it an ideal choice for demanding power electronics applications.

IPD60R950C6ATMA1 Features

  • Technology: Advanced MOSFET (Metal Oxide) technology for reliable and efficient operation.
  • Drain to Source Voltage (Vdss): 600V for high-voltage applications.
  • Continuous Drain Current (Id): 4.4A at 25°C for handling high current loads.
  • Rds On (Max): 950mOhm @ 1.5A, 10V for low on-resistance and high efficiency.
  • Gate Charge (Qg) (Max): 13 nC @ 10V for fast switching and reduced power loss.
  • Input Capacitance (Ciss) (Max): 280 pF @ 100V for low capacitance and improved performance.
  • Vgs (Max): ±20V for wide gate voltage range.
  • Vgs(th) (Max): 3.5V @ 130µA for reliable threshold voltage.
  • Power Dissipation (Max): 37W (Tc) for handling high power dissipation.
  • Mounting Type: Surface Mount for compact and efficient PCB design.
  • Package: Tape & Reel (TR) for easy handling and automation compatibility.
  • REACH Status: REACH Unaffected, ensuring compliance with environmental regulations.
  • RoHS Status: ROHS3 Compliant for eco-friendly design.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) for reliable performance in various environmental conditions.

IPD60R950C6ATMA1 Applications

The IPD60R950C6ATMA1 is ideal for a wide range of applications where high voltage, high current, and efficient power management are required. Some specific use cases include:

  1. Power Supplies: High-efficiency power conversion and regulation in various power supply designs.
  2. Motor Control: Reliable and efficient motor control in industrial and automotive applications.
  3. Renewable Energy: Power management and conversion in solar and wind energy systems.
  4. Electric Vehicles: High-voltage and high-current management in electric vehicle charging and powertrain systems.

Conclusion of IPD60R950C6ATMA1

The IPD60R950C6ATMA1 from Infineon Technologies is a powerful and efficient MOSFET designed for high-voltage and high-current applications. Its advanced technology, low on-resistance, and fast switching capabilities make it an ideal choice for demanding power electronics applications. With its compliance with environmental regulations and reliable performance in various conditions, the IPD60R950C6ATMA1 is a trusted solution for engineers and designers looking to optimize their power management systems.

FAQ

What is the standard lead time for IPD60R950C6ATMA1?
The standard lead time for IPD60R950C6ATMA1 is 20 Weeks.
Are there related or alternative parts for IPD60R950C6ATMA1?
What operating temperature range does IPD60R950C6ATMA1 support?
What voltage specification is listed for IPD60R950C6ATMA1?
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