Infineon Technologies

IPD50R2K0CEAUMA1  

Single FETs, MOSFETs

IPD50R2K0CEAUMA1 Description

The IPD50R2K0CEAUMA1 is a high-performance N-channel MOSFET from Infineon Technologies, designed for a wide range of power electronics applications. With a drain-to-source voltage of 500V and a continuous drain current of 2.4A at 25°C, this device delivers exceptional performance in demanding environments. Its low on-resistance of 2Ω at 600mA and 13V gate-source voltage ensures high efficiency and minimal power loss. The IPD50R2K0CEAUMA1 is also RoHS3 compliant and REACH unaffected, making it an environmentally friendly choice for your designs.

IPD50R2K0CEAUMA1 Features

• High Drain-to-Source Voltage (Vdss): 500V for reliable operation in high-voltage applications.
• Low On-Resistance (Rds On): 2Ω at 600mA and 13V Vgs for high efficiency and minimal power loss.
• Continuous Drain Current (Id): 2.4A at 25°C for handling high current loads.
• Low Gate Threshold Voltage (Vgs(th)): 3.5V at 50µA for easy gate drive and control.
• Robust Gate Charge (Qg): 6nC at 10V for fast switching and reduced switching losses.
• Low Input Capacitance (Ciss): 124pF at 100V for improved high-frequency performance.
• Surface Mount Technology:。
• CoolMOS™ CE Series: Part of Infineon's advanced CoolMOS™ CE series, known for their excellent thermal performance and reliability.

IPD50R2K0CEAUMA1 Applications

The IPD50R2K0CEAUMA1 is ideal for various power electronics applications where high efficiency, reliability, and performance are critical. Some specific use cases include:

• Switching Power Supplies: Utilizing its high voltage and low on-resistance, the IPD50R2K0CEAUMA1 is perfect for high-efficiency power conversion in switching power supplies.
• Motor Controls: Its ability to handle high currents and voltages makes it suitable for motor drive applications, providing precise control and high efficiency.
• Automotive Electronics: The device's robustness and compliance with environmental standards make it an excellent choice for automotive electronics, where reliability and safety are paramount.
• Industrial Controls: In industrial settings, the IPD50R2K0CEAUMA1 can be used in various control systems requiring high voltage and current handling capabilities.

Conclusion of IPD50R2K0CEAUMA1

The IPD50R2K0CEAUMA1 from Infineon Technologies is a powerful N-channel MOSFET designed for high-performance power electronics applications. Its combination of high voltage, low on-resistance, and excellent thermal performance make it a top choice for demanding applications such as switching power supplies, motor controls, automotive electronics, and industrial controls. While it is marked as "Not For New Designs," it continues to offer a reliable solution for existing designs that require its specific performance characteristics.

IPD50R2K0CEAUMA1 Documents

Download datasheets and manufacturer documentation for IPD50R2K0CEAUMA1

Datasheets :

IPx50R2K0CE      

Other Related Documents :

Part Number Guide      

HTML Datasheet :

IPx50R2K0CE      

Simulation Models :

CoolMOS™ Power MOSFET 500V C3 Spice Model