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IPD60R400CEAUMA1

IPD60R400CEAUMA1 Description

The IPD60R400CEAUMA1 from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. Part of the CoolMOS™ CE series, this device offers a robust 600V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 14.7A (Tc), making it suitable for high-efficiency switching applications. With an Rds(on) (max) of 400mΩ at 3.8A and 10V gate drive, it ensures low conduction losses, enhancing overall system efficiency. The MOSFET is housed in a TO-252 (DPAK) package, optimized for surface-mount (SMD) assembly, and is available in Tape & Reel (TR) packaging for automated production.

IPD60R400CEAUMA1 Features

• Low On-Resistance: 400mΩ @ 10V Vgs minimizes power dissipation, improving thermal performance.
• High Voltage Rating: 600V Vdss ensures reliability in high-voltage circuits.
• Optimized Gate Charge: 32nC (Qg) @ 10V reduces switching losses, enabling faster switching frequencies.
• Robust Thermal Performance: 112W max power dissipation (Tc) allows for efficient heat management.
• Wide Gate-Source Voltage Range: ±20V Vgs(max) provides flexibility in drive circuitry.
• Advanced Technology: CoolMOS™ CE design balances cost and performance for industrial applications.
• Compliance: ROHS3, REACH Unaffected, ECCN EAR99 ensures adherence to environmental and export regulations.

IPD60R400CEAUMA1 Applications

This MOSFET is ideal for high-efficiency power conversion systems, including:

• Switch-Mode Power Supplies (SMPS): AC/DC and DC/DC converters.
• Motor Drives: Inverter and H-bridge configurations.
• Industrial Power Systems: UPS, solar inverters, and welding equipment.
• Automotive & Consumer Electronics: LED drivers and battery management systems.
  Its low gate charge and high switching speed make it particularly suitable for high-frequency applications, while its high voltage tolerance ensures durability in harsh environments.

Conclusion of IPD60R400CEAUMA1

The IPD60R400CEAUMA1 stands out as a high-efficiency, high-reliability MOSFET for modern power electronics. Its low Rds(on), optimized switching characteristics, and robust thermal performance make it a preferred choice for engineers designing energy-efficient systems. Whether in industrial, automotive, or consumer applications, this device delivers superior performance, cost-effectiveness, and compliance with global standards, solidifying Infineon’s leadership in power semiconductor innovation.