Infineon Technologies_IPD60R1K5CEAUMA1
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Infineon Technologies
IPD60R1K5CEAUMA1

278-IPD60R1K5CEAUMA1
PDF Datasheet
MOSFET N-CH 600V 5A TO252
20 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
40
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
9.4 nC @ 10 V
Typical Rise Time (ns)
7
PPAP
No
Channel Mode
Enhancement
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IPD60R1K5CEAUMA1 Description

IPD60R1K5CEAUMA1 Description

The IPD60R1K5CEAUMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 5A at 25°C, this device is well-suited for demanding power electronics applications.

IPD60R1K5CEAUMA1 Features

  • 600V Drain-to-Source Voltage (Vdss): Provides high voltage tolerance for applications such as power supplies and motor controls.
  • 5A Continuous Drain Current (Id) @ 25°C: Delivers ample current for various power electronics needs.
  • 1.5 Ohm Rds On (Max) @ 1.1A, 10V: Offers low on-resistance for efficient power dissipation.
  • 3.5V Vgs(th) (Max) @ 90µA: Ensures reliable switching with a low threshold voltage.
  • 200 pF Input Capacitance (Ciss) (Max) @ 100V: Minimizes input capacitance for faster switching speeds.
  • 9.4 nC Gate Charge (Qg) (Max) @ 10V: Reduces switching losses and improves efficiency.
  • 49W Power Dissipation (Max): Capable of handling significant power dissipation, making it suitable for high-power applications.
  • Surface Mount Technology: Facilitates integration into compact and space-constrained designs.

IPD60R1K5CEAUMA1 Applications

The IPD60R1K5CEAUMA1 is ideal for a variety of applications where high voltage and current handling are required:

  1. Power Supplies: Due to its high Vdss and low Rds On, it is suitable for high-efficiency power supply designs.
  2. Motor Controls: The device's robust current and voltage ratings make it a good fit for motor drive applications.
  3. Automotive Electronics: Its ability to handle high voltages and currents, along with its low gate charge, makes it suitable for automotive electronics, such as electric vehicle components.
  4. Industrial Controls: Reliable for applications requiring high power switching and control in industrial settings.

Conclusion of IPD60R1K5CEAUMA1

The IPD60R1K5CEAUMA1 stands out for its combination of high voltage and current ratings, low on-resistance, and efficient switching capabilities. Its unique features, such as low gate charge and input capacitance, provide advantages over similar models by reducing switching losses and improving overall efficiency. This MOSFET is an excellent choice for applications where high performance and reliability are paramount, such as in power supplies, motor controls, automotive electronics, and industrial controls.

FAQ

What is the mounting type of IPD60R1K5CEAUMA1?
IPD60R1K5CEAUMA1 uses a Surface Mount mounting style based on the listed product specifications.
What voltage specification is listed for IPD60R1K5CEAUMA1?
Is IPD60R1K5CEAUMA1 currently in stock?
What is the standard lead time for IPD60R1K5CEAUMA1?
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