Infineon Technologies_IPD60R600E6
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Infineon Technologies
IPD60R600E6

278-IPD60R600E6
PDF Datasheet
MOSFET N-CH 600V 7.3A TO252-3

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
20.5 nC @ 10 V
Product Status
Discontinued at Digi-Key
Supplier Device Package
PG-TO252-3
Drain to Source Voltage (Vdss)
600 V
Power Dissipation (Max)
63W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
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IPD60R600E6 Description

IPD60R600E6 Description

The IPD60R600E6 is a high-performance MOSFET (Metal Oxide) from Infineon Technologies, designed for applications requiring high voltage and current capabilities. It features a drain to source voltage (Vdss) of 600V, a continuous drain current (Id) of 7.3A at 25°C, and a maximum power dissipation of 63W at case temperature (Tc). With its low on-resistance (Rds On) of 600mOhm at 2.4A and 10V gate-source voltage (Vgs), the IPD60R600E6 offers high efficiency and low power loss in various electronic systems.

IPD60R600E6 Features

  • Technology: MOSFET (Metal Oxide)
  • Series: CoolMOS™ E6
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100V
  • Vgs (Max): ±20V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

IPD60R600E6 Applications

The IPD60R600E6 is ideal for various high-voltage and high-current applications, including:

  1. Power Supplies: Due to its high voltage and current ratings, the IPD60R600E6 is suitable for power supply designs, such as switching power supplies and power factor correction circuits.
  2. Industrial Control: The MOSFET's high voltage and current capabilities make it suitable for motor control and industrial automation applications.
  3. Automotive: The IPD60R600E6 can be used in automotive applications, such as electric vehicle charging systems and power management.
  4. Renewable Energy: The MOSFET's high voltage and current ratings make it suitable for solar power inverters and wind energy systems.

Conclusion of IPD60R600E6

The IPD60R600E6 from Infineon Technologies is a high-performance MOSFET designed for demanding high-voltage and high-current applications. Its unique features, such as low on-resistance, high efficiency, and robust construction, make it an ideal choice for power supplies, industrial control, automotive, and renewable energy systems. With its compliance to REACH and RoHS regulations, the IPD60R600E6 is a reliable and environmentally friendly solution for your electronic design needs.

FAQ

What operating temperature range does IPD60R600E6 support?
IPD60R600E6 has an operating temperature range of -55°C ~ 150°C (TJ).
What package or case is IPD60R600E6 available in?
What voltage specification is listed for IPD60R600E6?
What is IPD60R600E6?
Are there related or alternative parts for IPD60R600E6?
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