Infineon Technologies_IPD70R600P7SAUMA1

Infineon Technologies
IPD70R600P7SAUMA1  
Single FETs, MOSFETs

IPD70R600P7SAUMA1
278-IPD70R600P7SAUMA1
Ersa
Infineon Technologies-IPD70R600P7SAUMA1-datasheets-5225999.pdf
MOSFET N-CH 700V 8.5A TO252-3
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IPD70R600P7SAUMA1 Description

IPD70R600P7SAUMA1 Description

The IPD70R600P7SAUMA1 is a high-performance MOSFET N-CH 700V 8.5A TO252-3 manufactured by Infineon Technologies. This device is part of the CoolMOS™ P7 series and is designed for applications requiring high efficiency and reliability. With a maximum drain-to-source voltage of 700V and a continuous drain current of 8.5A at 25°C, the IPD70R600P7SAUMA1 offers excellent electrical performance.

IPD70R600P7SAUMA1 Features

  • Technology: MOSFET (Metal Oxide)
  • Input Capacitance (Ciss): 364 pF @ 400 V
  • Gate Charge (Qg): 10.5 nC @ 10 V
  • Drain to Source Voltage (Vdss): 700 V
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max): 600mOhm @ 1.8A, 10V
  • Vgs(th) (Max): 3.5V @ 90µA
  • Vgs (Max): ±16V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

IPD70R600P7SAUMA1 Applications

The IPD70R600P7SAUMA1 is ideal for a variety of applications where high voltage and current handling are required. Some specific use cases include:

  1. Power Supplies: Due to its high voltage and current ratings, the IPD70R600P7SAUMA1 is suitable for use in power supply designs, providing efficient power conversion and regulation.
  2. Motor Control: The device's low Rds On and high voltage capabilities make it an excellent choice for motor control applications, ensuring efficient motor operation and reduced power losses.
  3. Automotive Electronics: The IPD70R600P7SAUMA1 can be used in various automotive electronics, such as electric power steering and battery management systems, where high reliability and performance are critical.

Conclusion of IPD70R600P7SAUMA1

The IPD70R600P7SAUMA1 from Infineon Technologies is a powerful MOSFET N-CH 700V 8.5A TO252-3 that offers superior performance and reliability. Its unique features, such as low Rds On and high voltage capabilities, make it an ideal choice for a range of applications, including power supplies, motor control, and automotive electronics. With its REACH unaffected and RoHS3 compliant status, the IPD70R600P7SAUMA1 is not only a high-performance device but also environmentally friendly.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Moisture Sensitive
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

IPD70R600P7SAUMA1 Documents

Download datasheets and manufacturer documentation for IPD70R600P7SAUMA1

Ersa IPD70R600P7S      
Ersa Part Number Guide      
Ersa IPD70R600P7S      
Ersa CoolMOS™ Power MOSFET 700V P7 Spice Model      
Ersa RoHS Certificate      

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