Infineon Technologies_IPP17N25S3100AKSA1

Infineon Technologies
IPP17N25S3100AKSA1  
Single FETs, MOSFETs

IPP17N25S3100AKSA1
278-IPP17N25S3100AKSA1
Ersa
Infineon Technologies-IPP17N25S3100AKSA1-datasheets-10682867.pdf
MOSFET N-CH 250V 17A TO220-3
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IPP17N25S3100AKSA1 Description

IPP17N25S3100AKSA1 Description

The IPP17N25S3100AKSA1 from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. Part of the OptiMOS™ series, this device features a 250V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 17A at 25°C (Tc), making it suitable for high-efficiency switching applications. With a low on-resistance (Rds On) of 100mOhm at 17A and 10V gate drive, it minimizes conduction losses, enhancing overall system efficiency. The MOSFET is housed in a TO-220-3 package, ensuring robust thermal performance and ease of mounting in through-hole designs.

IPP17N25S3100AKSA1 Features

  • Low Gate Charge (Qg): 19nC at 10V reduces switching losses, improving efficiency in high-frequency applications.
  • High Input Capacitance (Ciss): 1500pF at 25V ensures stable gate control.
  • Wide Gate-Source Voltage (Vgs) Range: ±20V offers flexibility in drive circuitry design.
  • Optimized Thermal Performance: 107W power dissipation (Tc) enables reliable operation under high loads.
  • Compliance: ROHS3 and REACH unaffected, meeting stringent environmental standards.
  • Reliability: MSL 1 (Unlimited) ensures long shelf life and handling ease.

IPP17N25S3100AKSA1 Applications

This MOSFET is ideal for:

  • Switched-Mode Power Supplies (SMPS): High voltage and low Rds On make it perfect for AC-DC and DC-DC converters.
  • Motor Control: Efficient switching capabilities suit brushed and brushless motor drives.
  • Industrial Power Systems: Robust performance in inverters, UPS, and welding equipment.
  • Automotive Electronics: Suitable for auxiliary power systems and LED drivers.
  • Renewable Energy: Solar inverters benefit from its high voltage tolerance and efficiency.

Conclusion of IPP17N25S3100AKSA1

The IPP17N25S3100AKSA1 stands out for its low conduction losses, high switching efficiency, and thermal robustness, making it a superior choice for power electronics designers. Its OptiMOS™ technology ensures reliability in high-stress environments, while compliance with ROHS3 and REACH underscores its environmental safety. Though marked as Last Time Buy, its performance metrics and versatility in industrial, automotive, and renewable energy applications make it a compelling option for legacy and new designs alike.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Qualification
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

IPP17N25S3100AKSA1 Documents

Download datasheets and manufacturer documentation for IPP17N25S3100AKSA1

Ersa IPB17N25S3-100, IPP17N25S3-100      
Ersa Part Number Guide      
Ersa IPB17N25S3-100, IPP17N25S3-100      
Ersa RoHS Certificate      

Shopping Guide

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