The IPP17N25S3100AKSA1 from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. Part of the OptiMOS™ series, this device features a 250V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 17A at 25°C (Tc), making it suitable for high-efficiency switching applications. With a low on-resistance (Rds On) of 100mOhm at 17A and 10V gate drive, it minimizes conduction losses, enhancing overall system efficiency. The MOSFET is housed in a TO-220-3 package, ensuring robust thermal performance and ease of mounting in through-hole designs.
This MOSFET is ideal for:
The IPP17N25S3100AKSA1 stands out for its low conduction losses, high switching efficiency, and thermal robustness, making it a superior choice for power electronics designers. Its OptiMOS™ technology ensures reliability in high-stress environments, while compliance with ROHS3 and REACH underscores its environmental safety. Though marked as Last Time Buy, its performance metrics and versatility in industrial, automotive, and renewable energy applications make it a compelling option for legacy and new designs alike.
Download datasheets and manufacturer documentation for IPP17N25S3100AKSA1