The IRFB4410 from Infineon Technologies is a high-performance N-channel HEXFET® MOSFET designed for power management applications requiring robust efficiency and thermal stability. With a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 96A (at 25°C case temperature), this MOSFET is engineered to handle high-power loads while minimizing conduction losses. Its low on-resistance (Rds(on)) of 10mΩ at 10V gate drive ensures superior switching performance, making it ideal for demanding circuits. Although marked as obsolete, its legacy design remains relevant for specific industrial and automotive applications.
The IRFB4410 excels in:
Despite its obsolete status, the IRFB4410 remains a compelling choice for engineers seeking a high-efficiency, high-power MOSFET with proven HEXFET® reliability. Its low Rds(on), high current rating, and thermal resilience make it suitable for legacy designs or replacements in industrial, automotive, and power conversion systems. While newer alternatives exist, its performance in high-current switching and motor control ensures continued relevance in specific applications.
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Download datasheets and manufacturer documentation for IRFB4410