Infineon Technologies_IRFB4410

Infineon Technologies
IRFB4410  
Single FETs, MOSFETs

IRFB4410
278-IRFB4410
Ersa
Infineon Technologies-IRFB4410-datasheets-6867461.pdf
MOSFET N-CH 100V 96A TO220AB
In Stock : 15694

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IRFB4410 Description

IRFB4410 Description

The IRFB4410 from Infineon Technologies is a high-performance N-channel HEXFET® MOSFET designed for power management applications requiring robust efficiency and thermal stability. With a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 96A (at 25°C case temperature), this MOSFET is engineered to handle high-power loads while minimizing conduction losses. Its low on-resistance (Rds(on)) of 10mΩ at 10V gate drive ensures superior switching performance, making it ideal for demanding circuits. Although marked as obsolete, its legacy design remains relevant for specific industrial and automotive applications.

IRFB4410 Features

  • High Power Handling: Rated for 250W (Tc) power dissipation, ensuring reliability in high-temperature environments.
  • Low Gate Charge (Qg): 180nC at 10V reduces switching losses, enhancing efficiency in high-frequency applications.
  • Robust Input Capacitance: 5150pF at 50V balances switching speed and noise immunity.
  • Wide Gate-Source Voltage Range: ±20V Vgs(max) offers flexibility in drive circuitry.
  • Through-Hole TO-220AB Package: Facilitates easy mounting and heat dissipation in power systems.
  • HEXFET® Technology: Delivers low Rds(on) and high current capability, outperforming standard MOSFETs in efficiency.

IRFB4410 Applications

The IRFB4410 excels in:

  • Switching Power Supplies: Optimizes efficiency in DC-DC converters and SMPS designs.
  • Motor Control Systems: Provides high-current handling for industrial motor drives and robotics.
  • Automotive Electronics: Suitable for ignition systems, LED drivers, and battery management.
  • Inverters & UPS: Ensures minimal power loss in backup and renewable energy systems.
  • High-Current Load Switching: Ideal for relays, solenoids, and power distribution modules.

Conclusion of IRFB4410

Despite its obsolete status, the IRFB4410 remains a compelling choice for engineers seeking a high-efficiency, high-power MOSFET with proven HEXFET® reliability. Its low Rds(on), high current rating, and thermal resilience make it suitable for legacy designs or replacements in industrial, automotive, and power conversion systems. While newer alternatives exist, its performance in high-current switching and motor control ensures continued relevance in specific applications.

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Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package

IRFB4410 Documents

Download datasheets and manufacturer documentation for IRFB4410

Ersa IRFB4410, IRFS(L)4410      
Ersa IR Part Numbering System      
Ersa IRFB4410, IRFS(L)4410      

Shopping Guide

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