Infineon Technologies_IPN80R4K5P7ATMA1

Infineon Technologies
IPN80R4K5P7ATMA1  
Single FETs, MOSFETs

IPN80R4K5P7ATMA1
278-IPN80R4K5P7ATMA1
Ersa
Infineon Technologies-IPN80R4K5P7ATMA1-datasheets-13262505.pdf
MOSFET N-CH 800V 1.5A SOT223
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    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    IPN80R4K5P7ATMA1 Description

    Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the IPN80R4K5P7ATMA1 belongs to can be classified under the Discrete Semiconductors. IPN80R4K5P7ATMA1 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. IPN80R4K5P7ATMA1 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Infineon Technologies plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Infineon Technologies is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Infineon Technologies builds trust with consumers and enhances the overall reputation of their products.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Typical Reverse Recovery Charge (nC)
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    Typical Drain Source Resistance @ 25°C (mOhm)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Typical Gate Plateau Voltage (V)
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Typical Diode Forward Voltage (V)
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    IPN80R4K5P7ATMA1 Documents

    Download datasheets and manufacturer documentation for IPN80R4K5P7ATMA1

    Ersa IPN80R4K5P7      
    Ersa IPN80R4K5P7      
    Ersa CoolMOS™ Power MOSFET 800V P7 Spice Model      
    Ersa RoHS Certificate      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
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