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Microchip Technology
JANS2N5109UB
283-JANS2N5109UB
PDF Datasheet
Trans RF BJT NPN 20V 0.4A 1000mW 4-Pin Case UB
28 weeks
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Tech Specifications
Maximum Junction Case Thermal Resistance
60°C/W
Configuration
Single
PCB changed
4
HTS
EA
Typical Power Gain (dB)
11(Min)
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage (V)
20
ECCN (US)
EAR99
JANS2N5109UB Description
Trans RF BJT NPN 20V 0.4A 1000mW 4-Pin Case UB
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