Microchip Technology_LND150N8-G
original

Microchip Technology
LND150N8-G

278-LND150N8-G
PDF Datasheet
MOSFET N-CH 500V 30MA SOT89-3
4 Weeks

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Tech Specifications

Configuration
Single Dual Drain
Typical Turn-Off Delay Time (ns)
100
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
10 pF @ 25 V
Typical Rise Time (ns)
450
PPAP
No
Channel Mode
Depletion
Typical Turn-On Delay Time (ns)
90
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LND150N8-G Description

LND150N8-G Description

The LND150N8-G is a high-performance N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) manufactured by Microchip Technology. This device is designed to offer superior performance in a wide range of applications, including power switching, motor control, and voltage regulation. With a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 30mA at 25°C, the LND150N8-G is well-suited for demanding applications that require high voltage and current capabilities.

LND150N8-G Features

  • Depletion Mode Operation: The LND150N8-G operates in depletion mode, allowing for easier control and faster switching times compared to enhancement mode MOSFETs.
  • Low On-Resistance: With a maximum Rds(on) of 1000 Ohms at 500µA and 0V Vgs, the LND150N8-G provides efficient power switching with minimal power loss.
  • High Input Capacitance: The LND150N8-G has a maximum input capacitance (Ciss) of 10 pF at 25V, enabling fast charging and discharging times for improved performance.
  • Robust Voltage Ratings: The device can handle a maximum gate-to-source voltage (Vgs) of ±20V, providing flexibility in various circuit designs.
  • Surface Mount Packaging: The LND150N8-G is available in a SOT89-3 package, making it ideal for surface mount applications and compact designs.
  • Compliance with Industry Standards: The device is REACH unaffected, RoHS3 compliant, and classified as EAR99, ensuring compliance with environmental and trade regulations.

LND150N8-G Applications

The LND150N8-G is ideal for a variety of applications where high voltage and current handling capabilities are required. Some specific use cases include:

  • Power Switching: The LND150N8-G's high Vdss rating makes it suitable for power switching applications in consumer electronics, industrial equipment, and automotive systems.
  • Motor Control: The device's low on-resistance and high current handling capabilities make it an excellent choice for motor control applications, such as in robotics and industrial automation.
  • Voltage Regulation: The LND150N8-G's high input capacitance and fast switching times make it well-suited for voltage regulation applications, including power supply design and voltage conversion.

Conclusion of LND150N8-G

The LND150N8-G is a versatile and high-performance MOSFET that offers a unique combination of features, including high voltage and current ratings, low on-resistance, and fast switching times. Its depletion mode operation, surface mount packaging, and compliance with industry standards make it an ideal choice for a wide range of applications in the electronics industry. With its superior performance and unique features, the LND150N8-G stands out as a reliable and efficient solution for demanding applications.

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