Microchip Technology
TN2106K1-G  
Single FETs, MOSFETs

TN2106K1-G
278-TN2106K1-G
Ersa
Microchip Technology-TN2106K1-G-datasheets-3191259.pdf
MOSFET N-CH 60V 280MA TO236AB
In Stock : 14044

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ISO9001
Quality Policy
ISO45001
ISO14001

TN2106K1-G Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the TN2106K1-G belongs to can be classified under the Discrete Semiconductors. TN2106K1-G is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. TN2106K1-G provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Microchip Technology plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Microchip Technology is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Microchip Technology builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Material
Package Length
Series
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Product
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

TN2106K1-G Documents

Download datasheets and manufacturer documentation for TN2106K1-G

Ersa Qualification Report Revision 29/Jan/2015      
Ersa TN2106      
Ersa Packing Changes 10/Oct/2016       Label and Packing Changes 23/Sep/2015      
Ersa Die Attach Material Update 22/Jun/2015       TN2106 30/Oct/2020      
Ersa Microchip CA Prop65       Microchip RoHS       Microchip REACH      

Shopping Guide

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