Microchip Technology

TP5335K1-G  

Single FETs, MOSFETs

TP5335K1-G Description

The TP5335K1-G is a high-performance MOSFET (Metal Oxide) device manufactured by Microchip Technology. This P-channel device is designed for applications requiring robust power dissipation and high drain-source voltage ratings. With a maximum power dissipation of 360mW and a drain-to-source voltage of 350V, the TP5335K1-G is well-suited for various electronic systems.

TP5335K1-G Features

• Input Capacitance (Ciss): The TP5335K1-G boasts a maximum input capacitance of 110 pF at 25V, ensuring fast switching and minimal signal distortion.
• Drain to Source Voltage (Vdss): Capable of withstanding up to 350V, this MOSFET is ideal for high-voltage applications.
• Power Dissipation (Max): The device can handle a maximum power dissipation of 360mW, making it suitable for demanding power management tasks.
• Technology: Utilizing advanced MOSFET technology, the TP5335K1-G offers improved performance and reliability.
• Mounting Type: Surface mount design for easy integration into modern electronic systems.
• Rds On (Max) @ Id, Vgs: With a maximum on-resistance of 30Ohm at 200mA and 10V, the TP5335K1-G provides efficient current flow and reduced power loss.

TP5335K1-G Applications

The TP5335K1-G is an excellent choice for various applications, including:

• Power Management: Due to its high power dissipation and drain-source voltage ratings, this MOSFET is ideal for power management systems in consumer electronics.
• Automotive Electronics: The robust design and high voltage make it suitable for automotive electronics, such as ignition systems and powertrain controls.
• Industrial Control Systems: The TP5335K1-G's performance benefits are well-suited for industrial control systems, where reliability and efficiency are critical.

Conclusion of TP5335K1-G

The TP5335K1-G from Microchip Technology stands out as a reliable and high-performing MOSFET, offering unique advantages such as high input capacitance, power dissipation, and drain-source voltage ratings. Its surface mount design and advanced MOSFET technology make it an ideal choice for a wide range of applications, from power management to automotive electronics. With its compliance with REACH and RoHS3 standards, the TP5335K1-G is not only a high-performance solution but also an environmentally responsible choice for electronic design engineers.

TP5335K1-G Documents

Download datasheets and manufacturer documentation for TP5335K1-G

PCN Assembly/Origin :

Qualification Supertex Devices 22/Jul/2014      

Datasheets :

TP5335      

PCN Packaging :

Packing Changes 10/Oct/2016       Label and Packing Changes 23/Sep/2015      

HTML Datasheet :

TP5335      

PCN Design/Specification :

TP5335 23/Mar/2022       TP5335xx 07/Apr/2023      

Environmental Information :

Microchip CA Prop65       Microchip RoHS       Microchip REACH